Charge state modulation of nitrogen vacancy centers in diamond by applying a forward voltage across a p–i–n junction

Shimizu, Masaru; Makino, Toshiharu; Iwasaki, Takayuki; Hasegawa, Jun; Tahara, Kosuke; Naruki, Wataru; Kato, Hiromitsu; Yamasaki, Satoshi; Hatano, Mutsuko

doi:10.1016/j.diamond.2015.10.022

Cited by 18 publications

(15 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In general, the spin-coherence time is inversely proportional to the concentration of both uncontrolled electron and nuclear spins around the NV center [16,30]. At high doping level [N] > 100 ppm, and with concentration of 13 C nuclear spin of 1.1 %, the coherence-time T Possible means to overcome these limitations would be to apply the gate voltage in an in-plane configuration [61,73], see Fig. 5 (b).…”

Section: B Stability Of Shallow Nv − Centersmentioning

confidence: 99%

Role of exchange interaction in nitrogen vacancy center based magnetometry

Tan

Jalil

et al. 2016

Phys. Rev. B

View full text Add to dashboard Cite

We propose a multilayer device comprising of a thin-film-based ferromagnetic hetero-structure (FMH) deposited on a diamond layer doped with nitrogen vacancy centers (NVC's). We find that when the NVC's are in close proximity (1-2 nm) with the FMH, the exchange energy is comparable to, and may even surpass the magnetostatic interaction energy. This calls for the need to consider and utilize both effects in magnetometry based on NVC's in diamond. As the distance between the FMH and NVC is decreased to the sub-nanometer scale, the exponential increase in the exchange energy suggests spintronic applications of NVC beyond magnetometry, such as detection of spin-Hall effect or spin currents.

show abstract

Section: B Stability Of Shallow Nv − Centersmentioning

confidence: 99%

Role of exchange interaction in nitrogen vacancy center based magnetometry

Tan

Jalil

et al. 2016

Phys. Rev. B

View full text Add to dashboard Cite

show abstract

“…An exponential rise in the NV − /NV 0 ratio with increasing negative bias was done and its relationship follows the NV − /NV 0 = 1.13 × e −0.125V , where the V was the applied voltage in volts [132]. Depending on this effect, a diamond p-i-n (p-typeintrinsic-n-type) junction was fabricated to control the charge state of NV centers in the i-layer by applying a forward bias below the built-in voltage [133]. Engineering of the Fermi level by a n-i-n diamond junction was demonstrated for the control of the charge state of the NV centers in the intrinsic layer region.…”

Section: Alternative Effective Treatment Approachesmentioning

confidence: 99%

Diamond with nitrogen: states, control, and applications

Zheng

Liu

et al. 2021

Functional Diamond

View full text Add to dashboard Cite

the burgeoning multi-field applications of diamond concurrently bring up a foremost consideration associated with nitrogen. Ubiquitous nitrogen in both natural and artificial diamond in most cases as disruptive impurity is undesirable for diamond material properties, eg deterioration in electrical performance. however, the feat of this most common elementnitrogen, can change diamond growth evolution, endow diamond fancy colors and even give quantum technology a solid boost. this perspective reviews the understanding and progress of nitrogen in diamond including natural occurring gemstones and their synthetic counterparts formed by high temperature high pressure (hPht) and chemical vapor deposition (cVD) methods. the review paper covers a variety of topics ranging from the basis of physical state of nitrogen and its related defects as well as the resulting effects in diamond (including nitrogen termination on diamond surface), to precise control of nitrogen incorporation associated with selective post-treatments and finally to the practical utilization. among the multitudinous potential nitrogen related centers, the nitrogen-vacancy (NV) defects in diamond have attracted particular interest and are still ceaselessly drawing extensive attentions for quantum frontiers advance.

show abstract

“…The switching of charge states of NV centers between NV − , NV 0 , and NV + can be passively controlled by the local environment of NV centers, [ 65,96,106 ] and actively controlled by applied voltage and current injection. [ 62,84,107 ] These approaches can greatly improve the stability and emission intensity of NV − centers near the surface and would enhance the sensitivity of an NV‐based quantum sensor. Furthermore, an electrode array deposited near a single NV center on the diamond surface shows enormous potential for a scalable hybrid quantum system.…”

Section: Charge‐state Manipulation Of Nv Color Centers In Diamondmentioning

confidence: 99%

“…To preserve the pure environment around the NV center as much as possible and to avoid the influence of impurities, a pin diode is typically used. [ 107,111,112 ] Generally, an intrinsic diamond layer is epitaxially grown on a p‐type boron‐doped HPHT diamond substrate and a layer of n‐type phosphorus‐doped diamond is deposited on the intrinsic diamond. [ 112 ] The NV center is produced by introducing nitrogen into the growth of the intrinsic layer, or by ion implantation of nitrogen atoms.…”

Section: Charge‐state Manipulation Of Nv Color Centers In Diamondmentioning

confidence: 99%

“…[ 111 ] Although researchers realized the initialization of pure NV 0 centers, it also hints that this method may be used to achieve the more practical NV − center initialization. Another structure, in which two phosphorus‐doped epitaxial layers are deposited on the intrinsic layer by photolithography, is used to populate negative‐charge‐state NV centers, as shown in Figure 12f, [ 107 ] which is located between two n‐type layers. As shown in Figure 12g, when the applied forward bias is less than the built‐in voltage, the charge state transitions to a negative charge state.…”

Section: Charge‐state Manipulation Of Nv Color Centers In Diamondmentioning

confidence: 99%

See 1 more Smart Citation

Tailoring of Typical Color Centers in Diamond for Photonics

et al. 2020

View full text Add to dashboard Cite

On the demand of single‐photon entangled light sources and high‐sensitivity probes in the fields of quantum information processing, weak magnetic field detection and biosensing, the nitrogen vacancy (NV) color center is very attractive and has been deeply and intensively studied, due to its convenience of spin initialization, operation, and optical readout combined with long coherence time in the ambient environment. Although the application prospect is promising, there are still some problems to be solved before fully exerting its characteristic performance, including enhancement of emission of NV centers in certain charge state (NV− or NV0), obtaining indistinguishable photons, and improving of collecting efficiency for the photons. Herein, the research progress in these issues is reviewed and commented on to help researchers grasp the current trends. In addition, the development of emerging color centers, such as germanium vacancy defects, and rare‐earth dopants, with great potential for various applications, are also briefly surveyed.

show abstract

Charge state modulation of nitrogen vacancy centers in diamond by applying a forward voltage across a p–i–n junction

Cited by 18 publications

References 25 publications

Role of exchange interaction in nitrogen vacancy center based magnetometry

Role of exchange interaction in nitrogen vacancy center based magnetometry

Diamond with nitrogen: states, control, and applications

Tailoring of Typical Color Centers in Diamond for Photonics

Contact Info

Product

Resources

About