Charge storage behavior of nanostructures based on SiGe nanocrystals embedded in Al2O3 matrix

Vieira, E. M. F.; Levichev, S.; Dias, C.J.; Igreja, Rui; Buljan, Maja; Bernstorff, Sigrid; Conde, O.; Chahboun, A.; Rolo, Anabela G.; Gomes, M. J. M.

doi:10.1140/epjb/e2013-40124-2

Cited by 6 publications

(4 citation statements)

References 32 publications

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“…From this Fig. is clear that for our device is rectifying with more current at positive bias, suggesting that the current transport is electron dominated [16]. Also, from the Fig.…”

Section: Conduction Mechanims: J-v Curvesupporting

confidence: 56%

Effect of annealing time on memory behavior of MOS structures based on Ge nanoparticles

Mederos

Mestanza

Dói

et al. 2014

2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)

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Effects of annealing time on memory characteristics of Ge nanoparticles (NPs) as floating gate of metal-oxide-semiconductor (MOS) structure are investigated in this work. First, Ge NPs at 8.5 nm-near to Si/Si0 2 interface were obtained by Low Pressure Chemical Vapor Deposition (LPCVD). The morphology and dimension of these NPs was estimated by the statistic treatment of Atomic Force Microscopy images, which exhibited an homogeneous distribution of NPs over Si0 2 , with a main diameter of (6.72±1.97) nm and NPs-density of 1.5xlO 12 cm· 2 • For the characterization of memory properties, high-frequency Capacitive-Voltage measurements as function of annealing time were performed on the MOS structure containing these Ge NPs. The results showed a memory window of 11.92 V with an electrical charge storage density of 6.61xlO 12 cm· 2 • The Current-Voltage measurement showed a Fowler-Nordheim tunneling as the conduction mechanism of our device.

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“…From this Fig. is clear that for our device is rectifying with more current at positive bias, suggesting that the current transport is electron dominated [16]. Also, from the Fig.…”

Section: Conduction Mechanims: J-v Curvesupporting

confidence: 56%

Effect of annealing time on memory behavior of MOS structures based on Ge nanoparticles

Mederos

Mestanza

Dói

et al. 2014

2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)

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“…Selected publications on Ge-NC-NVM can be found in King et al (2001), , Kanjilal et al (2005), ), Chakraborty et al (2011), and Das et al (2011. Other semiconductor NCs are SiGe (Vieira et al 2013), InAs (Islam and Banerji 2015), and GaN .…”

Section: Materials and Size-dependent Characteristics Of Qdsmentioning

confidence: 99%

Charge-Trapping Non-Volatile Memories

Dimitrakis¹

2015

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“…To expand its application in electronics and photoelectronics, it is necessary for suitable intermediate levels to be constructed. The introduction of nanocrystals in oxide films can enhance the local electric field, and then improve the dispersion of the electronic device conversion parameters significantly . Especially in Al 2 O 3 nanostructure matrix, the introduction of Ag nanoparticles can bring about the formation of hybrid structure, and moreover many defect traps can be generated as well.…”

Section: Introductionmentioning

confidence: 99%

Trap‐Related Nonvolatile Negative Photoconductivity in a Single Ag@Al₂O₃ Hybrid Nanorod for a Photomemory with Light‐Writing and Bias‐Erasing

Zhou

et al. 2019

Advanced Optical Materials

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For zero band‐gap metal Ag and ultrawide band‐gap Al2O3, it is difficult to produce impressive photoresponse to visible light due to the limitation of energy gaps. Herein, it is demonstrated that individual Ag@Al2O3 hybrid nanorods, synthesized by a two‐stage hydrothermal method and followed by thermal reduction annealing, can show excellent negative photoconduction of about 400 nm violet and 800 nm near‐infrared lights at room temperature. Moreover, the light‐induced high resistance state (HRS) is well maintained at relatively low operation bias after the removal of illumination, indicative of a nonvolatile memory effect. More importantly, the device is back to its initial low resistance state (LRS) after subsequently being applied a relatively large bias, suggestive of an erasable effect with large bias. In the hybrid nanorods, Ag nanoparticles serve as trap centers and can capture and store charges. Under the illumination of sub‐band‐gap light, trapped charges are excited, resulting in an HRS due to emptying the traps. On the contrary, a large external electric field triggers charges to be injected into traps in dark, resulting in an LRS. Regarding a superior negative photoswitching with light‐writing and bias‐erasing memory, Ag@Al2O3 nanohybrids have a tremendous potential in optical sensors and nonvolatile photomemory applications.

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Charge storage behavior of nanostructures based on SiGe nanocrystals embedded in Al2O3 matrix

Cited by 6 publications

References 32 publications

Effect of annealing time on memory behavior of MOS structures based on Ge nanoparticles

Effect of annealing time on memory behavior of MOS structures based on Ge nanoparticles

Charge-Trapping Non-Volatile Memories

Trap‐Related Nonvolatile Negative Photoconductivity in a Single Ag@Al₂O₃ Hybrid Nanorod for a Photomemory with Light‐Writing and Bias‐Erasing

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Charge storage behavior of nanostructures based on SiGe nanocrystals embedded in Al2O3 matrix

Cited by 6 publications

References 32 publications

Effect of annealing time on memory behavior of MOS structures based on Ge nanoparticles

Effect of annealing time on memory behavior of MOS structures based on Ge nanoparticles

Charge-Trapping Non-Volatile Memories

Trap‐Related Nonvolatile Negative Photoconductivity in a Single Ag@Al2O3 Hybrid Nanorod for a Photomemory with Light‐Writing and Bias‐Erasing

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Trap‐Related Nonvolatile Negative Photoconductivity in a Single Ag@Al₂O₃ Hybrid Nanorod for a Photomemory with Light‐Writing and Bias‐Erasing