Charge storage characteristics of hydrogenated nanocrystalline silicon film prepared by rapid thermal annealing

Non-volatile memory based on TiN nanocrystal (TiN-NC) charge storage nodes embedded in SiO2 has been fabricated and its electrical properties have been measured. It was found that the density and size distribution of TiN-NCs can be controlled by annealing temperature. The formation of well separated crystalline TiN nano-dots with an average size of 5nm is confirmed by transmission electron microscopy and x-ray diffraction. x-ray photoelectron spectroscopy confirms the existence of a transition layer of TiNxOy/SiON oxide between TiN-NC and SiO2, which reduces the barrier height of tunnel oxide and thereby enhances programming/erasing speed. The memory device shows a memory window of 2.5V and an endurance cycle throughout 105. Its charging mechanism, which is interpreted from the analysis of programming speed (dVth/dt) and the gate leakage versus voltage characteristics (Ig vs Vg), has been explained by direct tunnelling for tunnel oxide and Fowler–Nordheim tunnelling for control oxide at programming voltages lower than 9V, and by Fowler–Nordheim tunnelling for both the oxides at programming voltages higher than 9 V.

show abstract

Abnormal Capacitance Hysteresis Phenomena in Stacked Nanocrystalline-Si Based Metal Insulator Semiconductor Memory Structure

Wang

Song

Guo

et al. 2012

KEM

View full text Add to dashboard Cite

Stack nanocrystalline-Si (nc-Si) based metal insulator semiconductor memory structure was fabricated by plasma enhanced chemical vapor deposition. The doubly stacked layers of nc-Si with the thickness of about 5 nm were fabricated by the layer-by-layer deposition technique with silane and hydrogen mixture gas. Capacitance-Voltage (C-V) measurements were used to investigate electron tunnel and storage characteristic. Abnormal capacitance hysteresis phenomena are obtained. The C-V results show that the flatband voltage increases at first, then decreases and finally increases, exhibiting a clear deep at gate voltage of 9 V. The charge transfer effect model was put forward to explain the electron storage and discharging mechanism of the stacked nc-Si based memory structure. The decreasing of flatband voltage at moderate programming bias is attributed to the transfer of electrons from the lower nc-Si layer to the upper nc-Si layer.

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Charge storage characteristics of hydrogenated nanocrystalline silicon film prepared by rapid thermal annealing

Cited by 3 publications

References 15 publications

Photovoltaics literature survey (No. 55)

Photovoltaics literature survey (No. 55)

Formation of high density TiN nanocrystals and its application in non-volatile memories

Abnormal Capacitance Hysteresis Phenomena in Stacked Nanocrystalline-Si Based Metal Insulator Semiconductor Memory Structure

Contact Info

Product

Resources

About