Charge storage characteristics of Mo nanocrystal dependence on Mo oxide reduction

Nonvolatile floating gate memory containing AgInSbTe–SiO2nanocomposite layer and capping the HfO2/SiO2composite blocking oxide layer

“…This is ascribed to the high-barrier feature of the HfO 2 /SiO 2 oxide layer which effectively inhibits the injection of charge trapped in AIST NCs to the gate electrode so as to yield a stable V FB shift property during the cycle operation. In comparison with previous studies utilizing at least 20 nm thick blocking oxide layers [12][13][14][15][16][17][18][19], the HfO 2 /SiO 2 composite oxide layer with thickness less than 15 nm is able to suppress the charge injection in the NFGM and implies the good retention property. This is ascribed to the insertion of a PECVD SiO 2 layer with relatively large E g (=9 eV) which renders a sufficiently high barrier to alleviate the charge tunneling.…”

“…Recently, NFGM devices utilizing either semiconductor or metallic nanocrystals (NCs) as the discrete charge storage traps have attracted considerable attention due to their advantages of low lateral leakage current, low power consumption, high operative efficiency and better endurance [4][5][6]. Tiwari et al first implanted the Si NCs in NFGM [7] and, afterwards, various NFGMs containing semiconductor NCs such as germanium (Ge) [8] and SiGe [9] or transition metal NCs such as silver (Ag) [1], ruthenium (Ru) [10], tungsten (W) [11], cobalt (Co) [12], platinum (Pt) [13], gold (Au) [14], nickel (Ni) [15], molybdenum (Mo) [16], chromium (Cr) [17] and iridium (Ir) [18] were reported. Among these, the transition metal NCs provided better memory performance and retention characteristics due to their high thermal stability and suitable physical properties [10][11][12][13][14][15][16][17][18].…”

Charge-Trapping Non-Volatile Memories

“…However, it had been indicated that formation of metallic oxide in the metal NC would diminish the memory window, which can be restored through reduction of metallic oxide (Lin et al 2008b). Metal silicides such as W, Mo, Ni and Co Silicide have been proposed and explored also for NC-NVM Yang et al 2007;Ren et al 2012;Lin et al 2008a;Hu et al 2009) since they exhibit better thermal stability compared to metal NCs.…”

Influence of molybdenum doping on the switching characteristic in silicon oxide-based resistive switching memory

“…In addition, molybdenum oxide may transform to molybdenum nanocrystals due to the thermal effect which has been induced by the forming process. 13,14 This nanocrystal formation and consequent generation of additional oxygen ions per molybdenum atom have been shown to improve the RS performance. 8 In this work, standard lithography and reactive ion etching were used to pattern the contact-holes of the cells on the TiN bottom electrode.…”