Influence of molybdenum doping on the switching characteristic in silicon oxide-based resistive switching memory

Abstract

This report compares Mo-doped and undoped SiO2 thin films of a similar thickness as well as MoOx. The Mo-doped SiO2 film exhibited switching behavior after the forming process, unlike the undoped SiO2 film. Through material analyses, a self-assembled layer is observed in the Mo-doped SiO2 film. Due to the formation of this layer, the thickness required to be broken down is effectively reduced. Subsequently, the occurrence of the switching behavior in the thinner SiO2 film further confirmed the supposition. A comparison of the two switching behaviors shows that SiO2 dominates the switching characteristic of the Mo-doped SiO2.

Bipolar and unipolar resistive switching modes in Pt/Zn0.99Zr0.01O/Pt structure for multi-bit resistance random access memory

“…However, nonlinear I-V characteristic appears at higher electric field in HRS. The classical nonlinear conduction mechanisms, including Schottky emission, 19 Poole-Frenkel emission, 20 and space charge limited current (SCLC), 21,22 were all adopted to try to fit the nonlinearity of the measured I-V relation, and it was found that SCLC has the best fit. At low voltages (<0.32 V), I-V curve exhibits linear behavior and the conduction behavior is governed by ohmic law.…”

Bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices

“…3(c) and 3(d). The on/off ratio of the device is slightly lower than those reported in the literature, 13 but it can be improved by increasing the number of oxygen vacancies using oxygen doping, for example, as reported in Ref. 14.…”

High-Performance Resistance Switching Memory Devices Using Spin-On Silicon Oxide

“…Apart from changes in the bulk HSQ layer, chemical and structural changes at the insulator-metal (HSQ-Mo) interface under applied bias could also contribute to the switching mechanism. We are planning further work to investigate interfacial changes such as proton exchange [17], [18] and the formation of molybdenum oxide [19], [20] at the interface in order to gain a deeper understanding of the switching mechanisms in our devices.…”