High-Performance Resistance Switching Memory Devices Using Spin-On Silicon Oxide

Abstract

In this paper, we present high-performance resistance switching memory devices (RRAM) with a SiO 2 -like active layer formed from spin-on hydrogen silsesquioxane (HSQ). Our metalinsulator-metal devices exhibit switching voltages of less than 1 V, cycling endurance of more than 10 7 cycles without failure, electroforming below 2 V at room temperature, and retention time of resistance states of more than 10 4 seconds at temperatures up to 120°C. We also report arrays of nanoscale HSQ-based RRAM devices in the form of multilayer nanopillars with switching performance comparable to that of our thin film devices. We are able to address and program individual RRAM nanopillars using conductive atomic force microscopy. These promising results, coupled with a much easier fabrication method than traditional ultrahigh vacuum-based deposition techniques, make HSQ a strong candidate material for the next-generation memory devices.

Silicon Oxide (SiOx): A Promising Material for Resistance Switching?

“…Columnar growth may be promoted by increasing the roughness between bottom electrode and oxide—rougher interfaces resulting in an atomic shadowing effect and formation of columns . Air‐stable switching is typically seen in moderately thick oxides (30–40 nm), although it can be observed in even thinner, chemically produced oxides if the microstructure is appropriate.…”

Engineering Silicon Oxide by Argon Ion Implantation for High Performance Resistance Switching

“…These results are different from previously reported intrinsic bipolar SiO x ReRAM devices. Ng et al (2018) and Mehonic et al (2012) report trap-assisted tunnelling (TAT) to be the dominant conduction mechanism, but TAT may be less important in our devices because of lower applied field or differences in microstructure and the distribution of defects within the oxide.…”

Resistive Switching Characteristic Improvement in a Single-Walled Carbon Nanotube Random Network Embedded Hydrogen Silsesquioxane Thin Films for Flexible Memristors

“…Meanwhile, the RS properties of silicon-oxide-based materials have been reported since the 1960s through various configurations and structures, such as amorphous silicon oxide, silicon-rich silica (SiO x ) nanopillars, and metal-dispersed SiO 2 films [ 19 , 20 , 21 , 22 , 23 , 24 ]. In particular, memristor devices using SiO x -based spin-on-glass (SOG) silsesquioxane as the RS layer have been recently reported [ 25 , 26 , 27 , 28 ].…”