Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in ${p}$ -GaN Gate HEMTs

Wei, Jin; Xie, Ruiqing; Han, Xu; Wang, Hanxing; Wang, Yuru; Hua, Mengyuan; Zhong, Kailun; Tang, Gaofei; He, Jiabei; Zhang, Meng; Chen, Kevin J.

doi:10.1109/led.2019.2900154

Cited by 136 publications

(36 citation statements)

References 26 publications

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“…On the other hand, the positive VTH shift is ascribed to trapping of negative charge in the gate stack (mechanism 3), as preliminarily proposed in [12]. Specifically, when the device is in the off-state, holes may leave the p-GaN layer through the Schottky junction, thus leaving the ionized acceptors behind.…”

Section: A Pulsed Characterizationmentioning

confidence: 83%

“…Specifically, when the device is in the off-state, holes may leave the p-GaN layer through the Schottky junction, thus leaving the ionized acceptors behind. When the drain bias drops, a portion of the negative charges remains stored in the p-GaN layer, since the Schottky junction is reversed biased and charge redistribution is a relatively slow process, resulting in a positive VTH shift [12]. An alternative explanation could be the trapping of electrons at the barrier [13].…”

Section: A Pulsed Characterizationmentioning

confidence: 99%

“…As a consequence, the negative charge trapping responsible for VTH and RON instability is not supposed to be in the buffer, but possibly to trapping in the gate stack or at the surface or in the active region [12]. We repeated the substrate ramp down to -200 V with a wait time (300 s) between each measurement during which we apply UV light (λ = 365 nm) on the floating device under test.…”

Section: Substrate Rampsmentioning

confidence: 99%

“…Recently reports investigated the effects of drain bias stress on the threshold voltage VTH and ON-resistance in p-GaN gate HEMTs. Specifically, it was observed that a drain bias stress may induce a VTH shift of the p-GaN gate HEMT, ascribed to negative charge storage in the floating p-GaN layer [12]. Efthymiou et al attributed the VTH instability due to off-state drain stress to the ionization of Mg acceptors traps followed by hole depletion in the AlGaN region below the p-GaN gate [13].…”

Section: Introductionmentioning

confidence: 99%

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OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redistribution

Canato

Meneghini

Santi

et al. 2020

Microelectronics Reliability

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We present an extensive analysis of the trapping processes induced by drain bias stress in AlGaN/GaN highelectron-mobility transistors (HEMTs) with p-GaN gate. We demonstrate that: (i) with increasing drain stress, pulsed I-V and VTH measurements shown an initial positive VTH variation and an increase in RON then, for drain voltages >100 V, VTH is stable and the RON shows a partial recovery. (ii) At moderate voltages, VTH instability is related to trapping at the gate stack, due to residual negative charge left behind by the holes that leave the p-GaN layer through the Schottky gate contact and/or to trapping at the barrier. At higher voltages, we demonstrate the interplay of two trapping processes by C-V and pulsed drain current analysis: (iii) a fast storage of positive charge, accumulated near the buffer/SRL interface, not strongly thermally activated, dominating at higher voltages; (iv) a slower negative charge storage, thermally activated with activation energies for trapping and de-trapping equal to ~0.6 eV and ~0.4-0.8 eV, respectively.

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Section: A Pulsed Characterizationmentioning

confidence: 83%

Section: A Pulsed Characterizationmentioning

confidence: 99%

Section: Substrate Rampsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redistribution

Canato

Meneghini

Santi

et al. 2020

Microelectronics Reliability

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“…The characteristics of the proposed SiC IGBT experiencing multicycle switching process are necessary to be investigated. For unipolar power devices, e.g., SiC power MOSFET, it has been found that floating p-regions bring degradation in the conduction property of the device, due to the negative charges stored in floating pregions [36][37][38]. In off-state, the floating p-regions are depleted, and the remaining negative charges in the floating p-regions help to bear the off-state drain voltage.…”

Section: Dynamic Characteristicsmentioning

confidence: 99%

A New SiC Planar-Gate IGBT for Injection Enhancement Effect and Low Oxide Field

Zhang¹,

Li²,

Zheng³

et al. 2020

Energies

Self Cite

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A new silicon carbide (SiC) planar-gate insulated-gate bipolar transistor (IGBT) is proposed and comprehensively investigated in this paper. Compared to the traditional SiC planar-gate IGBT, the new IGBT boasts a much stronger injection enhancement effect, which leads to a low on-state voltage (VON) approaching the SiC trench-gate IGBT. The strong injection enhancement effect is obtained by a heavily doped carrier storage layer (CSL), which creates a hole barrier under the p-body to hinder minority carriers from being extracted away through the p-body. A p-shield is located at the bottom of the CSL and coupled to the p-body of the IGBT by an embedded p-MOSFET (metal-oxide-semiconductor field effect transistors). In off-state, the heavily doped CSL is shielded by the p-MOSFET clamped p-shield. Thus, a high breakdown voltage is maintained. At the same time, owing to the planar-gate structure, the proposed IGBT does not suffer the high oxide field that threatens the long-term reliability of the trench-gate IGBT. The turn-off characteristics of the new IGBT are also studied, and the turn-off energy loss (EOFF) is similar to the conventional planar-gate IGBT. Therefore, the new IGBT achieves the benefits of both the conventional planar-gate IGBT and the trench-gate IGBT, i.e., a superior VON-EOFF trade-off and a low oxide field.

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III – V and Wide Bandgap

Alomari¹

2022

Advances in Semiconductor Technologies

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Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in ${p}$ -GaN Gate HEMTs

Cited by 136 publications

References 26 publications

OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redistribution

OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redistribution

A New SiC Planar-Gate IGBT for Injection Enhancement Effect and Low Oxide Field

III – V and Wide Bandgap

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