Cite this article as: M. Falmbigl, D. Putzky, J. Ditto and D.C. Johnson, Influence of interstitial V on structure and properties of ferecrystalline ([SnSe]1.15)1(V1+xSe2)n for n=1, 2, 3, 4, 5, and 6, Journal of Solid State Chemistry, http://dx.
AbstractA series of ferecrystalline compounds ([SnSe] 1.15 ) 1 (V 1+x Se 2 ) n with n = 1 -6 and a thin film V 1+x Se 2 were synthesized utilizing the modulated elemental reactant technique. The effect of interstitial V-atoms ranging from 0.13 x 0.42 in different compounds on structure and electrical properties of these intergrowth compounds is reported. The presence of the interstitial V-atoms for n > 1 was confirmed by Rietveld refinements as well as HAADF-STEM cross sections. The off-stoichiometry in the thin film V 1.13 Se 2 causes a suppression of the charge density wave, similar to the effect of non-stoichiometry observed for the bulk compound. The charge density wave of ([SnSe] 1.15 ) 1 (V 1+x Se 2 ) 1, however, is not affected by the non-stoichiometry due to its incorporation as volume inclusions or due to the quasi 2-dimensionality of the isolated VSe 2 layer. In the compounds ([SnSe] 1.15 ) 1 (V 1+x Se 2 ) n with n = 2 -6, the temperature dependence of the electrical resistivity approaches bulk-like behavior.