Charge-transport processes in thin metal films

Reale, C.

doi:10.1007/bf02748107

Cited by 5 publications

(1 citation statement)

References 67 publications

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“…2 A fit of the experimental data to Eq. (12) using a renormalized 5F=7.1x 107cm/sec, 4~ k = 15.9 x 10 -12 ~-cm2, 34 If A~ = 1 is also valid for FD, a positive slope of the valence effect with dTc/dpB=22+4mK/ixl~-cm (averaged over all samples) is obtained. Using Eq.…”

Section: Results and Discussion Of Leadmentioning

confidence: 99%

Superconducting critical temperature in disordered tin and lead

Klaumünzer¹,

Ischenko²,

Adrian³

et al. 1979

J Low Temp Phys

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Three-micrometer-thick tin and lead films were irradiated at temperatures below 7.2K with 25-MeV oxygen ions. The radiation-induced residual resistivity APB, superconducting critical temperature T~, and transition width T~ were measured as a function of dose and subsequent thermal annealing. For tin it is found that T~ is mainly a function of ApB, with the detailed nature of the defects being of minor importance. Quantitative agreement with theory is obtained considering two effects: an enhancement o) e the isotropic part of the electron-phonon interaction and a smearing out of its anisotropic part with decreasing mean free path of the electrons. For lead the change of Tc depends on the defect configuration and it is shown that dislocation loops produce a significant Tc increase. A possible phonon contribution to To due to different vibrational modes of the radiation-induced defects and the host is discussed.

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Section: Results and Discussion Of Leadmentioning

confidence: 99%