Charge transport through a single tetracene grain boundary

Schön, J. H.; Kloc, Christian

doi:10.1063/1.1379986

Cited by 16 publications

(11 citation statements)

References 20 publications

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“…The process is similar to the carrier's transport through the crystalline grain boundary. [20][21][22] The localized potential barriers E b limit the carrier's transport in the conduction band. Consequently, the mobility is generally given by thermally emission over these barriers 20,23…”

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confidence: 99%

Amorphous HgCdTe infrared photoconductive detector with high detectivity above 200 K

Wang

Chen

et al. 2011

Applied Physics Letters

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Temperature dependence of dark current (I d) and photocurrent (I ph) is reported for Si-based amorphous HgCdTe (a-MCT) infrared photoconductive detector at 80-300 K. It is indicated that an uncooled a-MCT infrared detector can be fabricated based on the Si-based a-MCT. To describe the transport process, the Mott and Davis model [Davis and Mott, Philos. Mag. 22, 903 (1970)] is proposed as the conducting model originally developed for amorphous silicon. A possible mechanism of the carrier transports is shown in the a-MCT materials. The transport transition between the localized and extended carriers leads to the maximal I ph /I d above 200 K. V

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confidence: 99%

Amorphous HgCdTe infrared photoconductive detector with high detectivity above 200 K

Wang

Chen

et al. 2011

Applied Physics Letters

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“…The field-effect mobility, as defined by eqs. (1) and (2) 7,8,15,16 . However, the growth and processing of polymer crystals is neither simple nor inexpensive.…”

Section: State-of-the-art and Charge Transport In Polymer Tftsmentioning

confidence: 99%

“…Unfortunately, for amorphous polymer TFTs processed from solution, the estimated mobility is on the order of 10 -4 to 10 -3 cm 2 /V.s. Intergrain traps are often cited as the cause for the drop in the mobility in amorphous PFETs 15,16 and appropriate theoretical models have been developed 5,7,9 . However intergrain effects are more reasonable for polymer bulk rather than for surface effects.…”

Section: State-of-the-art and Charge Transport In Polymer Tftsmentioning

confidence: 99%

Noise and charge transport in polymer thin film structures

Marinov

Deen

et al. 2003

SPIE Proceedings

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The low frequency noise (LFN) properties of the field-effect transistors (FETs) using polymers as the semiconducting material in thin-film transistor (TFT) structures are investigated and discussed in terms of the charge carrier transport. Results obtained from several research groups are summarized. Injection-drift limited model (IDLM) for charge transport in amorphous PFETs is discussed. IDLM has some advantages in comparison to the commonly used metal-oxide-semiconductor (MOS) transistor models. A general trend of proportionality between noise power density and the DC power applied to the polymer FET's (PFET's) channel is observed in the data from several research groups. This trend implies mobility fluctuation in PFET as the dominant noise source.

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“…1-6 Apart from high performance reliability and device stability are other important issues for the application of organic materials. 15 Molecular crystals of the organic semiconductors pentacene and ␣-sexithiophene ͑␣-6T͒ have been grown from the vapor phase in a stream of hydrogen. [7][8][9][10][11][12][13] However, many of these effects might be ascribed to the presence of grain boundaries ͑GBs͒ rather than material degradation or instability itself.…”

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confidence: 99%

“…15 The evolution of the field-effect mobility as a function of exposure time to air is shown in Figs. 15 The evolution of the field-effect mobility as a function of exposure time to air is shown in Figs.…”

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confidence: 99%