On the stability of organic field-effect transistor materials

Schön, J. H.

doi:10.1063/1.1421230

Cited by 19 publications

(7 citation statements)

References 16 publications

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“…2,3,6 We fabricated OTFTs on p-type Si substrates with a thermally grown gate dielectric layer of 110-nm SiO 2 to exclude parasitic degradation effects by an e.g., polymeric substrate. The exact mechanism of each disturbance to the electrical key parameters of the die is not well known yet.…”

Section: Introductionmentioning

confidence: 99%

Degradation of organic field-effect transistors made of pentacene

2004

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This article reports degradation experiments on organic thin film transistors using the small organic molecule pentacene as the semiconducting material. Starting with degradation inert p-type silicon wafers as the substrate and SiO 2 as the gate dielectric, we show the influence of temperature and exposure to ambient air on the charge carrier field-effect mobility, on-off-ratio, and threshold-voltage. The devices were found to have unambiguously degraded over 3 orders of magnitude in maximum on-current and charge carrier field-effect mobility, but they still operated after a period of 9 months in ambient air conditions. A thermal treatment was carried out in vacuum conditions and revealed a degradation of the charge carrier field-effect mobility, maximum on-current, and threshold voltage.

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Section: Introductionmentioning

confidence: 99%

Degradation of organic field-effect transistors made of pentacene

2004

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“…The field-effect mobility, as defined by eqs. (1) and (2) 7,8,15,16 . However, the growth and processing of polymer crystals is neither simple nor inexpensive.…”

Section: State-of-the-art and Charge Transport In Polymer Tftsmentioning

confidence: 99%

“…Unfortunately, for amorphous polymer TFTs processed from solution, the estimated mobility is on the order of 10 -4 to 10 -3 cm 2 /V.s. Intergrain traps are often cited as the cause for the drop in the mobility in amorphous PFETs 15,16 and appropriate theoretical models have been developed 5,7,9 . However intergrain effects are more reasonable for polymer bulk rather than for surface effects.…”

Section: State-of-the-art and Charge Transport In Polymer Tftsmentioning

confidence: 99%

Noise and charge transport in polymer thin film structures

Marinov

Deen

et al. 2003

SPIE Proceedings

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The low frequency noise (LFN) properties of the field-effect transistors (FETs) using polymers as the semiconducting material in thin-film transistor (TFT) structures are investigated and discussed in terms of the charge carrier transport. Results obtained from several research groups are summarized. Injection-drift limited model (IDLM) for charge transport in amorphous PFETs is discussed. IDLM has some advantages in comparison to the commonly used metal-oxide-semiconductor (MOS) transistor models. A general trend of proportionality between noise power density and the DC power applied to the polymer FET's (PFET's) channel is observed in the data from several research groups. This trend implies mobility fluctuation in PFET as the dominant noise source.

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“…Organic light-emitting diodes (OLEDs) and field effect transistors (FETs) are two good examples of devices to which organic semiconductors can be applied. Pentacene, C 22 H 14 , is a promising material for this purpose due to the very high mobility * E-mail: ppotera@univ.rzeszow.pl of its charge carriers, which frequently exceed 1 cm 2 /Vs [3][4][5][6]. Organic crystals are formed from organic molecules bonded together by weak Van der Waals forces, which makes the process of growing single crystals or epitaxial layers more complicated and unstable with organic materials than with inorganic materials [7].…”

Section: Introductionmentioning

confidence: 99%

Structural and optical properties of layers of pentacene formed by PLD method

et al. 2008

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Abstract:Organic films fabrication offers the possibility of producing electronic devices of low weight, mechanical flexibility and low cost. One suitable material for organic film fabrigation which is the subject of the great interest is pentacene, because it is characterized by the large carrier mobility (∼1 cm 2 /Vs) . In this work, the growth of pentacene layers using pulse laser deposition (PLD) on different substrates (glass/ITO, Si) is described and various processing parameters are investigated . Two pulsed YAG:Nd 3+ laser wavelengths were used for the ablation of the PLD target: the first harmonic at 1064 nm and the second at 532 nm. The structure of the layers formed was examined using SEM and RHEED methods. The results were compared with results of optical spectroscopy studies. It will be shown that layers deposed using second harmonics have a higher quality than those for first harmonic. The other PLD parameters also have a strong influence on the structure quality of layers. 78.66.Qn, 81.15.Fg, 68.37.Hk PACS (2008):

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On the stability of organic field-effect transistor materials

Abstract: Organic field-effect transistors with single and double pentacene layers Appl. Phys. Lett. 86, 083505 (2005); 10.1063/1.1865331 Subthreshold characteristics of field effect transistors based on poly(3-dodecylthiophene) and an organic insulator

Cited by 19 publications

References 16 publications

Degradation of organic field-effect transistors made of pentacene

Degradation of organic field-effect transistors made of pentacene

Noise and charge transport in polymer thin film structures

Structural and optical properties of layers of pentacene formed by PLD method

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