This article reports degradation experiments on organic thin film transistors using the small organic molecule pentacene as the semiconducting material. Starting with degradation inert p-type silicon wafers as the substrate and SiO 2 as the gate dielectric, we show the influence of temperature and exposure to ambient air on the charge carrier field-effect mobility, on-off-ratio, and threshold-voltage. The devices were found to have unambiguously degraded over 3 orders of magnitude in maximum on-current and charge carrier field-effect mobility, but they still operated after a period of 9 months in ambient air conditions. A thermal treatment was carried out in vacuum conditions and revealed a degradation of the charge carrier field-effect mobility, maximum on-current, and threshold voltage.
The metallization of organic thin films is a crucial point in the development of molecular electronics. However, there is no method established yet to detect trace amounts of metal atoms in those thin films. Radiotracer measurements can quantify even very small amounts of material penetrating into the bulk, in our case less than 0.01% of a monolayer. Here, the application of this technique on two different well-characterized organic thin film systems (diindenoperylene and pentacene) is demonstrated. The results show that Ag is mainly adsorbed on the surface, but indicate that already at moderate deposition temperatures Ag can penetrate into the organic thin films and agglomerate at the film/substrate interface.
Articles you may be interested inTuning the threshold voltage by inserting a thin molybdenum oxide layer into organic field-effect transistors Appl. Phys. Lett. 91, 263502 (2007); 10.1063/1.2822443 Electret mechanism, hysteresis, and ambient performance of sol-gel silica gate dielectrics in pentacene fieldeffect transistors Appl. Phys. Lett. 91, 242107 (2007); 10.1063/1.2821377 Organic field-effect inversion-mode transistors and single-component complementary inverters on charged electrets High-mobility pentacene organic field-effect transistors with a high-dielectric-constant fluorinated polymer film gate dielectric Appl. Phys. Lett. 86, 242902 (2005); 10.1063/1.1946190 Fabrication and characterization of solution-processed methanofullerene-based organic field-effect transistors
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.