Charge-trapping characteristics of fluorinated thin ZrO2 film for nonvolatile memory applications

Huang, Xiaodong; Shi, Runpu; Lai, P. T.

doi:10.1063/1.4873388

Cited by 30 publications

(21 citation statements)

References 20 publications

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“…7, suggesting that the F-passivated Si-SiC(001) surface is stable within our AIMD simulation time scale. Similar results have been observed in SrTiO3 [40], Si [41], and ZrO2 [42] by using fluorine treatment to passivate the active charge trapping sites of the surface.…”

Section: Si-terminated Surface Fluorination Of Surfacesupporting

confidence: 81%

“…However, due to the high electronegativity of F atom, it is likely that at times longer than our AIMD time scale, additional F atoms near the surface might cleave the Si-C bonds and lead to degradation of the Si-terminated surface. A similar trend has been reported based on experiments in ZrO2 [42]. Specifically, Huang et al [42] observed that ZrO2 thin film was passivated by F atoms at short treatment time, whereas longer exposure time led to fluoride corrosion of the same samples.…”

Section: Si-terminated Surface Fluorination Of Surfacesupporting

confidence: 79%

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Corrosion of Si, C, and SiC in molten salt

Jiang

Liu

et al. 2019

Corrosion Science

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Section: Si-terminated Surface Fluorination Of Surfacesupporting

confidence: 81%

Section: Si-terminated Surface Fluorination Of Surfacesupporting

confidence: 79%

Corrosion of Si, C, and SiC in molten salt

Jiang

Liu

et al. 2019

Corrosion Science

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“…Although there are ~11 % degradation in charge retention for the crystalline ZrON, from the memory window vs retention time for the program and erase states shown in Fig. 11, the memory window of 1.96 V can be maintained for crystalline ZrON after 10-year operation which is still larger than that of amorphous ZrON which is 0.76 V. To improve the retention of the memory with crystalline ZrON, defects associated with grain boundaries can be passivated by NH3/H2 [16] or fluorine treatment [22] to suppress the leakage paths. Further enhanced charge retention can be achieved by adopting a high-κ double quantum barrier as the tunnel and blocking dielectric to lower the leakage current [23].…”

Section: (A) Investigating Crystalline Zro2 As Ctl For Si-based Flasmentioning

confidence: 99%

Toward Low-Power Flash Memory: Prospect of Adopting Crystalline Oxide as Charge Trapping Layer

Chen

Teng

Chang

et al. 2016

IEEE J. Electron Devices Soc.

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Journal of the Electron Devices Society 6 V. CONCLUSION With incumbent flash memory devices operated in the range of 15-17 V, it is imperative to pursue green flash memory that can be operated at voltage less than 10 V to realize a sustainable environment. In this paper, two promising CTL types based on crystalline oxide including crystalline high-k dielectric and crystalline oxide semiconductor which possess the capability to achieve this goal are reviewed. For CTL based on crystalline high-k dielectric, the distinct advantage for memory operation is the k value higher than 30 which is much higher than the amorphous counterpart and beneficial to reduce operation voltage since a higher effective electric field can be exerted on the tunnel SiO2 due to electric flux density continuity. The most concerned retention issue of adopting a crystalline high-k CTL has also be circumvented by passivation of grain boundaries related defects through plasma treatment. The concept of employing crystalline high-k dielectric as CTL not only works for Si-channel flash memory but also Ge-channel memory devices which enable superior memory performance to Si-based counterpart due to higher carrier mobility and more desirable band structure. For CTL based on crystalline oxide semiconductor, a CTL formed by stacking n-type and p-type oxide semiconductor demonstrates typical diode characteristics with a built-in internal electric field. It is the unique internal field that enhances P/E speed while reducing the operation voltage. Both kinds of CTL create a differentiating and pioneering technology that gains an outlook on realizing green flash memory devices.

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“…Furthermore, the impact of various treatments on memory device characteristics were also analyzed. The reason to adopt N 2 O or CF 4 plasma treatment lies in the fact that incorporation of anions such as nitrogen161718 or fluorine1920 into the CTL has been proposed to improve the characteristics of memory devices by introducing more deep-level traps. The results indicate that memory devices based on ZTO without any plasma treatment reveal negligible memory characteristics.…”

mentioning

confidence: 99%

Flash Memory Featuring Low-Voltage Operation by Crystalline ZrTiO4 Charge-Trapping Layer

Shen

Chen

et al. 2017

Sci Rep

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Crystalline ZrTiO4 (ZTO) in orthorhombic phase with different plasma treatments was explored as the charge-trapping layer for low-voltage operation flash memory. For ZTO without any plasma treatment, even with a high k value of 45.2, it almost cannot store charges due the oxygen vacancies-induced shallow-level traps that make charges easy to tunnel back to Si substrate. With CF4 plasma treatment, charge storage is still not improved even though incorporated F atoms could introduce additional traps since the F atoms disappear during the subsequent thermal annealing. On the contrary, nevertheless the k value degrades to 40.8, N2O plasma-treated ZTO shows promising performance in terms of 5-V hysteresis memory window by ±7-V sweeping voltage, 2.8-V flatband voltage shift by programming at +7 V for 100 μs, negligible memory window degradation with 105 program/erase cycles and 81.8% charge retention after 104 sec at 125 °C. These desirable characteristics are ascribed not only to passivation of oxygen vacancies-related shallow-level traps but to introduction of a large amount of deep-level bulk charge traps which have been proven by confirming thermally excited process as the charge loss mechanism and identifying traps located at energy level beneath ZTO conduction band by 0.84 eV~1.03 eV.

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Charge-trapping characteristics of fluorinated thin ZrO2 film for nonvolatile memory applications

Cited by 30 publications

References 20 publications

Corrosion of Si, C, and SiC in molten salt

Corrosion of Si, C, and SiC in molten salt

Toward Low-Power Flash Memory: Prospect of Adopting Crystalline Oxide as Charge Trapping Layer

Flash Memory Featuring Low-Voltage Operation by Crystalline ZrTiO4 Charge-Trapping Layer

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