Charge trapping-detrapping induced resistive switching in Ba0.7Sr0.3TiO3

Abstract

Intensive research has been devoted to the resistive switching phenomena observed in many transitional metal oxides because of its potential for non-volatile memory application. To clarify the underlying mechanism of resistive switching, a planar device can provide information that is not accessible in conventional vertical sandwich structures. Here we report the observation of resistive switching behavior in a Pt/Ba0.7Sr0.3TiO3/Pt planar device. Using in-situ scanning Kelvin probe microscopy, we demonstrate that charge trapping/detrapping around the Pt/Ba0.7Sr0.3TiO3 interface modulates the Schottky barrier, resulting in the observed resistive switching. The findings are valuable for the understanding of resistive switching in oxide materials

Modulation of resistance switching in Au/Nb:SrTiO3 Schottky junctions by ambient oxygen

“…[10][11][12] Electroforming-free bipolar RS appears for oxygen deficient interfaces [11][12][13] and is ascribed to changes of the Schottky barrier height and/or width due to trapping/detrapping effects at the interfacial defect states. [14][15][16] In this context, we originally show that the room-temperature junction hysteresis is reversibly modulated by the oxygen partial pressure (pO 2 ), and resistive switching is dramatically enhanced in vacuum and inert gases.…”

“…In fact, the leakage current in air represents a well-know measure of interfacial oxygen non-stoichometry [10][11][12][13][14][15][16] whereas the RS ratio in vacuum quantifies the junction sensitivity to O 2 . These evidences supported the conclusion that oxygen vacancies are the key players of electron tunnelling, RS and O 2 sensitivity in Au/Nb:STO junctions.…”

“…The opposite should take place under low pO 2 , providing RS with anticlockwise polarity and hysteretic tunnelling affected by trapping/detrapping effects at oxygenvacancy-induced interface states. [14][15][16] Oxygen excorporation is commonly observed in the electroforming of TiO 2 based devices. 3 These studies and atomic force microscopy experiments suggest that high electric fields do assist the oxygen extraction from the oxide matrix as well as the chemical oxidation process.…”

Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures

“…Under a pulsed voltage of different polarity, the junction demonstrates a reversible switching between nonvolatile high resistance state (HRS) and low resistance state (LRS)11. Many investigations indicate that this nonvolatile resistance switching can have different mechanisms812131415. One is the filamentary model, in which the junction barrier is locally destroyed (not simply modulated) and the conductive filament is formed while at other regions the Schottky barrier remains nearly unchanged14.…”

Enhanced resistive switching effect in Ag nanoparticle embedded BaTiO3 thin films

“…10,15 In addition, we further attribute the wide distribution of the set and reset voltages to the Ag NP's quantum confinement and Coulomb blockade effect. It has also been reported that the volatile electrode of Ag NPs results in easy formation of the Ag filament inside oxide films through ion diffusion mechanism, while the Ag nanodots inside the Ag film should enhance this process.…”