Enhanced resistive switching effect in Ag nanoparticle embedded BaTiO3 thin films

Au, K.; Gao, Xingsen; Wang, Juan; Bao, Zhiyu; Liu, J. M.; Dai, Jiyan

doi:10.1063/1.4812219

Cited by 54 publications

(31 citation statements)

References 15 publications

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“…Composite ferromagnets for example, can be used in magnetic field sensors, due to a high sensitivity of their resistance to a magnetic field change. Granular ferroelectrics -subject of this work -are useful in memory 11,12 and capacitor 13,14 applications because of their hysteresic behavior and their high dielectric permittivity.…”

Section: Introductionmentioning

confidence: 99%

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Interplay of Coulomb blockade and ferroelectricity in nanosized granular materials

et al. 2014

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We study electron transport properties of composite ferroelectrics -materials consisting of metallic grains embedded in a ferroelectric matrix. In particular, we calculate the conductivity in a wide range of temperatures and electric fields, showing pronounced hysteretic behavior. In weak fields, electron cotunneling is the main transport mechanism. In this case, we show that the ferroelectric matrix strongly influences the transport properties through two effects: i) the dependence of the Coulomb gap on the dielectric permittivity of the ferroelectric matrix, which in turn is controlled by temperature and external field; and ii) the dependence of the tunneling matrix elements on the electric polarization of the ferroelectric matrix, which can be tuned by temperature and applied electric field as well. In the case of strong electric fields, the Coulomb gap is suppressed and only the second mechanism is important. Our results are important for i) thermometers for precise temperature measurements and ii) ferrroelectric memristors.

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Section: Introductionmentioning

confidence: 99%

“…Recently, transport properties of composite ferroelectric materials were studied experimentally 12 . It was shown that GFEs exhibit two important features: i) switching between different resistive states and ii) a current voltage hysteresis.…”

mentioning

confidence: 99%

Interplay of Coulomb blockade and ferroelectricity in nanosized granular materials

et al. 2014

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“…These results suggest that the nitrogen doping method in WO x thin film produces new species of WN and W x (O, N) in the WO x :N thin film, improving the RS properties in WO x :N thin film [18]. It has been reported that metal nanoclusters embedded in insulators can generate a locally focused electric field, which assists oxygen vacancies to be locally aligned to form stable CFs in insulators [19,20]. Similarly, in this work, it is thought that metallic WN nanoclusters generated by nitrogen doping in WO x :N thin films might enhance the electric field for alignments of the oxygen vacancies between WN nanoclusters, resulting in the improved RS properties in WO x :N thin film.…”

Section: Fig 1(a) and (B)mentioning

confidence: 94%

Improved resistive switching properties by nitrogen doping in tungsten oxide thin films

et al. 2015

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“…[1][2][3][4][5] However, despite their good retention and endurance properties, two problems need to be resolved before taking into consideration device applications. One of the issues is to develop a reliable and compatible process for facile and low-cost fabrication, 1 the other is about improving memory switching parameters.…”

Section: Introductionmentioning

confidence: 99%

Low-cost fabrication and polar-dependent switching uniformity of memory devices using alumina interfacial layer and Ag nanoparticle monolayer

Xia

Wang

et al. 2017

AIP Advances

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A facile and low-cost process was developed for fabricating write-once-read-many-times (WORM) Cu/Ag NPs/Alumina/Al memory devices, where the alumina passivation layer formed naturally in air at room temperature, whereas the Ag nanoparticle monolayer was in situ prepared through thermal annealing of a 4.5 nm Ag film in air at 150°C. The devices exhibit irreversible transition from initial high resistance (OFF) state to low resistance (ON) state, with ON/OFF ratio of 107, indicating the introduction of Ag nanoparticle monolayer greatly improves ON/OFF ratio by four orders of magnitude. The uniformity of threshold voltages exhibits a polar-dependent behavior, and a narrow range of threshold voltages of 0.40 V among individual devices was achieved upon the forward voltage. The memory device can be regarded as two switching units connected in series. The uniform alumina interfacial layer and the non-uniform distribution of local electric fields originated from Ag nanoparticles might be responsible for excellent switching uniformity. Since silver ions in active layer can act as fast ion conductor, a plausible mechanism relating to the formation of filaments sequentially among the two switching units connected in series is suggested for the polar-dependent switching behavior. Furthermore, we demonstrate both alumina layer and Ag NPs monolayer play essential roles in improving switching parameters based on comparative experiments.

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Enhanced resistive switching effect in Ag nanoparticle embedded BaTiO3 thin films

Cited by 54 publications

References 15 publications

Interplay of Coulomb blockade and ferroelectricity in nanosized granular materials

Interplay of Coulomb blockade and ferroelectricity in nanosized granular materials

Improved resistive switching properties by nitrogen doping in tungsten oxide thin films

Low-cost fabrication and polar-dependent switching uniformity of memory devices using alumina interfacial layer and Ag nanoparticle monolayer

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