Improved resistive switching properties by nitrogen doping in tungsten oxide thin films

Hong, Seok Man; Kim, Hee Dong; Yun, Min Ju; Park, Jae Young; Jeon, Dong Su; Kim, Tae Geun

doi:10.1016/j.tsf.2015.03.049

Cited by 21 publications

(11 citation statements)

References 25 publications

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“…However, the as‐annealed films show rather two slopes in the Richardson plots, the higher‐temperature one being considered more reliable, leading to a φ B ‐value of 1.78 eV and a d ‐value of 5.6 nm. Considerations of this calculation at the reversed bias polarity yielding relevant φ B ‐values, as well as additional calculations at the forward bias, and a discussion of possible contribution of Frenkel–Poole emission transport are given in the Supporting Information.…”

Section: Resultsmentioning

confidence: 99%

“…This kind of resistive switching behavior can be explained as being due to the electric‐field‐driven movement of oxygen vacancies and thus induced changes in the Schottky junction that forms at the Au/WO x interface and dominates the transport properties at RT, as depicted in detail in Figure . The nature of the forming process appears to be bias‐polarity dependent.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Exploring Electron Transport and Memristive Switching in Nanoscale Au/WO_x/W Multijunctions Based on Anodically Oxidized Al/W Metal Layers

Bendová

Hubálek

Mozalev

2016

Adv Materials Inter

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size effect. [1][2][3] Eventual functionalization of WO x nanostructures through modifying the surface and interfacial properties by combining, doping, or decorating the pure oxide with other nanomaterials creates additional metal/semiconductor or semiconductor/semiconductor interfaces and grain boundaries capable of further infl uencing the sensing, electrical, optical, and opto-electronic properties or even introducing novel unique functionalities. [4][5][6] Contrarily to WO x nanostructures with no directional orientation of its morphological units, like disordered 1D nanowires or nanorods grown by vapor-and liquid-phase methods, [ 1,7 ] oriented 1D WO x nanostructures, self-organized and upright-standing on a conducting substrate, without mutually intersecting with each other are expected to bring more advantages for practical applications in nanoscale electrochromic, [ 8,9 ] fi eldemission, [ 10 ] gas-sensing, [ 11 ] and photonic devices. Moreover, substrate-supported 1D nanostructures assembled in an array would enable the use of their integral properties, especially electrical, optical, or mechanical in contrast with the formation and application of single nanowires relying on their individual characteristics. [ 12,13 ] Synthesis of WO x nanostructures regularly aligned on substrates has been an active and competitive area of nanoscience and nanotechnology as the arrays of 1D structures often suffer from mechanical weakness and randomly dispersed physical contacts between neighboring units, limiting their performance in a device. Besides, creating welldefi ned nanoscale metal/semiconductor electrical and thermal interfaces and boundaries by contacting the tops of 1D nanostructures assembled in an array in a reliable and reproducible manner to benefi t from the characteristics measured along the nanostructures and across relevant interfaces has been a challenge. [8][9][10][11][14][15][16][17] Surface engineering of aluminum [ 18 ] and porous anodic alumina (PAA) fi lms grown by anodic oxidation (anodizing) of aluminum have been of increasing interest for lithography-free templating of metals, dielectrics, and semiconductors. [19][20][21][22] PAA-assisted anodization [ 23 ] of certain valve metals sputtered on substrates, including tungsten, [24][25][26] has proven its potential as a reproducible method for electrochemically forming self-organized vertically aligned spatially separated 1D nanostructures (nanocolumns, rods, or tubes), being nearly ideally electrically and mechanically bonded at their bottoms either to the substrate metal [ 26 ] or to a continuous solid layer of similar metal oxide that grows at the columns/substrate-metal interface. [ 24,25 ] On the way An array of semiconducting tungsten-oxide (WO x ) nanorods, 100 nm wide and 700 nm long, is synthesized via the porous-anodic-alumina-assisted anodization of tungsten on a substrate and is modifi ed by annealing in air and vacuum. The rods buried in the alumina nanopores are self-anchored to the tungsten layer while their tops are interconnec...

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Exploring Electron Transport and Memristive Switching in Nanoscale Au/WO_x/W Multijunctions Based on Anodically Oxidized Al/W Metal Layers

Bendová

Hubálek

Mozalev

2016

Adv Materials Inter

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“…This conduction mechanism has been widely observed in HRS of several resistive switching devices that based on materials such as SnOx [24], ZnO [25,26], AlOx [27], CeOx [28], WOx [29], LaHoO3 [30] and etc. as listed in Table 2.…”

Section: Poole-frenkel (P-f) Emissionmentioning

confidence: 90%

“…While CF evolution is typically associated with thermal, electrical or ion migration [19,20], there is no consensus on the dominant conduction mechanism in resistive switching memory devices [21][22][23]. Among the commonly observed conduction mechanisms are: (i) Poole-Frenkel emission [24][25][26][27][28][29][30][31][32]; (ii) Schottky emission [33][34][35][36][37][38][39][40][41][42]; (iii) SCLC [43][44][45][46][47][48][49][50][51][52][53] (iv) trap-assisted tunneling [54][55][56][57][58][59]; and (v) hopping conduction [60][61][62][63][64][65]. To enhance the device performance and data retention property, it is crucial to identifying t...…”

Section: Introductionmentioning

confidence: 99%

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

2015

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Abstract:Resistive switching effect in transition metal oxide (TMO) based material is often associated with the valence change mechanism (VCM). Typical modeling of valence change resistive switching memory consists of three closely related phenomena, i.e., conductive filament (CF) geometry evolution, conduction mechanism and temperature dynamic evolution. It is widely agreed that the electrochemical reduction-oxidation (redox) process and oxygen vacancies migration plays an essential role in the CF forming and rupture process. However, the conduction mechanism of resistive switching memory varies considerably depending on the material used in the dielectric layer and selection of electrodes. Among the popular observations are the Poole-Frenkel emission, Schottky emission, space-charge-limited conduction (SCLC), trap-assisted tunneling (TAT) and hopping conduction. In this article, we will conduct a survey on several published valence change resistive switching memories with a particular interest in the I-V characteristic and the corresponding conduction mechanism.

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“…electrode-limited and bulk-limited conduction mechanisms. While Schottky emission (SE) 18 – 20 , Fowler-Nordheim (F-N) tunnelling 21 , 22 , direct tunnelling 23 , 24 and thermionic-field emission 25 , 26 are electrode-limited conduction mechanisms, Poole-Frenkel (P-F) emission 27 , 28 , hopping conduction 29 , 30 , Ohmic conduction 12 , 31 , space-charge-limited-conduction (SCLC) 32 , 33 , ionic conduction 34 , 35 , and trap-assisted tunnelling (TAT) 4 , 36 are bulk-limited conduction mechanisms 24 . In this work, conduction mechanisms were investigated from current-voltage (I–V) graphs of RRAM devices, validated by both temperature variation and transmission electron microcopy (TEM) studies.…”

Section: Introductionmentioning

confidence: 99%

Conduction Mechanisms on High Retention Annealed MgO-based Resistive Switching Memory Devices

Loy

Dananjaya

Hong

et al. 2018

Sci Rep

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We report on the conduction mechanisms of novel Ru/MgO/Cu and Ru/MgO/Ta resistive switching memory (RSM) devices. Current-voltage (I–V) measurements revealed Schottky emission (SE) as the dominant conduction mechanism in the high resistance state (HRS), which was validated by varying temperatures and transmission electron microscopy (TEM) results. Retention of more than 10 years at 85 °C was obtained for both Ru/MgO/Ta and Ru/MgO/Cu RSM devices. In addition, annealing processes greatly improved the consistency of HRS and LRS switching paths from cycle to cycle, exhibiting an average ON/OFF ratio of 102. Further TEM studies also highlighted the difference in crystallinity between different materials in Ru/MgO/Cu RSM devices, confirming Cu filament identification which was found to be 10 nm in width.

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Improved resistive switching properties by nitrogen doping in tungsten oxide thin films

Cited by 21 publications

References 25 publications

Exploring Electron Transport and Memristive Switching in Nanoscale Au/WO_x/W Multijunctions Based on Anodically Oxidized Al/W Metal Layers

Exploring Electron Transport and Memristive Switching in Nanoscale Au/WO_x/W Multijunctions Based on Anodically Oxidized Al/W Metal Layers

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

Conduction Mechanisms on High Retention Annealed MgO-based Resistive Switching Memory Devices

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Improved resistive switching properties by nitrogen doping in tungsten oxide thin films

Cited by 21 publications

References 25 publications

Exploring Electron Transport and Memristive Switching in Nanoscale Au/WOx/W Multijunctions Based on Anodically Oxidized Al/W Metal Layers

Exploring Electron Transport and Memristive Switching in Nanoscale Au/WOx/W Multijunctions Based on Anodically Oxidized Al/W Metal Layers

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

Conduction Mechanisms on High Retention Annealed MgO-based Resistive Switching Memory Devices

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Exploring Electron Transport and Memristive Switching in Nanoscale Au/WO_x/W Multijunctions Based on Anodically Oxidized Al/W Metal Layers

Exploring Electron Transport and Memristive Switching in Nanoscale Au/WO_x/W Multijunctions Based on Anodically Oxidized Al/W Metal Layers