The effect of hydrogen-postannealing on the endurance and data retention characteristics of an Au/Si3N4/Ti resistance memory cell is investigated. Compared to the as-deposited sample, the set and reset currents of the Au/Si3N4/Ti sample annealed at 250 °C for 30 min in a N2–H2 ambient gas, are reduced from 10 mA to 1.5 mA and from 3 mA to 5 μA, respectively, whereas the current ratio increases from ∼0.5×101 to ∼103. In addition, its reliability features, including its endurance (>103 cycles) and retention time (>ten years), have been improved due to the reduction in the interface trap.

1 Introduction Resistance random access memory (RRAM) has potential applications in many areas of transparent and flexible electronics because of its simple device structure, low power consumption, diversity of materials, and particularly high scalability, i.e., crossbar structure and multi-stacking memory architecture [1]. Researchers have proposed a number of metal oxides for RRAM applications, such as ZrO 2 , Al 2 O 3 , ZnO, TiO 2 , and NiO [2, 3]. Among these, ZnO is one of the most attractive materials for RRAM applications because of its high transparency, reliability, good ductility, and stable resistive switching (RS) behavior in a metal-insulator-metal (MIM) structure [4]. Recently, sol-gel methods have been widely used to grow ZnO thin films, owing to the low-temperature and simple fabrication processes applicable to flexible applications compared to sputtering and pulsed laser deposition [5]. Thus far, resistive switching behaviors on a flexible substrate have been reported only for ZnO thin films [3] but not for ZnO nanorods (NRs). Compared to RRAMs with thin films, a one-dimensional (1D) nanostructure can provide a localized vertical filament that allows for RS operation with a narrow dispersion of operating voltages [6]. On the other hand, the conduction filaments (CFs) in thin films are different with each switch, causing non-uniform

In this letter, to integrate bipolar resistive switching cells into cross bar array (CBA) structure, we study one-selector (1S) and one-resistor (1R) behavior of a niobium oxynitride (NbON) and niobium nitride (NbN) bilayer for the applications of resistive random access memory (RRAM). In this structure, a NbN layer exhibits bipolar switching characteristics while a NbON layer acts as the selector. The NbN-based 1S1R devices within a single RRAM memory cell can be directly integrated into a CBA structure without the need of extra diodes; this can significantly reduce the fabrication complexity.

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