Charge Trapping Devices Using a Bilayer Oxide Structure

Abstract

This experiment is the first exploration of use of charge traps in the bulk of deposited top oxide and at the interface between thermal oxide and deposited top oxide. We report the operational characteristics of SiO2/SiO2 device structures with 0.5 microm gate width and length. Low power operations are achieved through very thin gate stacks of 3 nm of thermally grown oxide and 7 nm of deposited oxide. However, narrow memory windows have been acquired comparing with conventional silicon-oxide-nitride-oxide-silicon (SONOS) memory cells due to a low trap density at the interface between a grown oxide and a deposited oxide. Additionally, the electric field between the channel and the charge is determined by solving 1D Poisson equation at a given write voltage, then total tunneling current density is calculated to make a program modeling for charge trapping devices. Tunneling/trapping simulation based on Fowler-Nordheim (F-N) tunneling performed and it fits the programming curves well. The memory window is almost constant after 100,000 cycles, and the retention characteristics are deteriorated rapidly.

Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice

“…This approach has been well established for silicon nanocrystals in SiO 2 matrix. However, most of the Si-NCs and superlattices in previous studies are fabricated by chemical vapor deposition (CVD) [18,19,20], sputtering [21,22,23], or other deposition techniques [24], these techniques are good at depositing thick film but weak in thin film. Which hamper the further study on the control of Si-NCs in superlattice with ultrathin dielectric film or barrier layer.…”

Measurements of Microstructural, Chemical, Optical, and Electrical Properties of Silicon-Oxygen-Nitrogen Films Prepared by Plasma-Enhanced Atomic Layer Deposition

“…Although there are many advantages of using the ALD technique in this area, there is still a lot of challenges that should be captured. First of all, most of the SiNCs and superlattices in previous studies are fabricated by CVD [23,24,25], sputtering [26,27,28], or other deposition techniques [29], there are few researches using ALD to fabricate superlattices. Besides, it is inevitable that there always exist oxygen defects or oxygen concentration in SiN x deposition.…”