Charge trapping in ultrathin hafnium oxide

Zhu, Wenjuan; Ma, T.P.; Zafar, Sufi; Tamagawa, T.

doi:10.1109/led.2002.804029

Cited by 156 publications

(75 citation statements)

References 8 publications

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“…While some of them might be associated with intrinsic bonding structures yet to be determined, we believe there is strong possibility that some are caused by the trapping/detrapping of tunneled electrons. 17,18 Our preliminary studies of traps in high-k gate dielectrics by the use of IETS appear to be very promising, and we will report our results in future publications.…”

Section: Center For Microelectronic Materials and Structures And Depamentioning

confidence: 91%

Inelastic electron tunneling spectroscopy study of ultrathin HfO2 and HfAlO

2003

Applied Physics Letters

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We have studied inelastic electron tunneling spectroscopy (IETS) in silicon metal-oxide-semiconductor systems with HfO2 and aluminum-doped HfO2 (HfAlO) as gate dielectrics. Samples with a thermal SiO2 layer (∼2 nm) were used to obtain reference spectra for the study. Information on chemical bonding structures and compositions of ultrathin HfO2 and HfAlO has been revealed by the IETS data. The bias polarity dependence of IETS has enabled differentiation of microstructures either near the gate electrode interface or near the silicon substrate interface.

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Section: Center For Microelectronic Materials and Structures And Depamentioning

confidence: 91%

Inelastic electron tunneling spectroscopy study of ultrathin HfO2 and HfAlO

2003

Applied Physics Letters

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“…4 there are some unidentified features. While some of them might be associated with intrinsic bonding structures yet to be determined, we believe that some are caused by the trapping/de-trapping of tunnelled electrons [17,18] due to bonding defects or impurities. The use of IETS to study traps in the gate dielectric is presented next.…”

Section: Iets Of Hfo 2 /Simentioning

confidence: 97%

Inelastic Electron Tunnelling Spectroscopy (IETS) of High-k Dielectrics

P.¹,

He²,

Wang³

2005

AIP Conference Proceedings

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It is shown that inelastic electron tunnelling spectroscopy (IETS) is a powerful technique to study microstructures and defects in Metal-Insulator-Semiconductor (MIS) systems where the insulator is sufficiently thin to allow significant tunnelling current to flow through. The information that may be revealed by IETS contains a wide variety of inelastic interactions, including interactions with phonons, various bonding vibrations, bonding defects, and impurities. Examples will be given to illustrate the capabilities of this technique.

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“…Charge trapping is an area of concern for these devices. HfO , a potential candidate for replacement, suffers from significant charge trapping as reported by Zhu [2] and Zafar [3] et al, when used with poly-Si gate. Hafnium silicate, another potential candidate, though has lower dielectric constants, has better leakage characteristics, improved , lower mobility degradation, and allow larger thermal budgets during processing than HfO [4].…”

Section: Introductionmentioning

confidence: 99%