Charting the Wireless Future (part 2)

Cooke, Mike

doi:10.1016/s0961-1290(06)71589-7

Cited by 6 publications

(6 citation statements)

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“…The rapid scaling of transistor and interconnect dimensions has enabled increased chip complexity and performance. In terms of CMOS for example, improvements in high-k dielectric materials have pushed this technology to approach a maximum speed 10-20GHz [5]. However, for ultra-low power designs, alternative materials, such as SiGe or III-V compound semiconductor technologies are the only viable option [5].…”

Section: Introductionmentioning

confidence: 99%

“…In terms of CMOS for example, improvements in high-k dielectric materials have pushed this technology to approach a maximum speed 10-20GHz [5]. However, for ultra-low power designs, alternative materials, such as SiGe or III-V compound semiconductor technologies are the only viable option [5].For mixed-signal applications and high-speed digital logic design, closely matched devices are indispensable. The improved threshold voltage control of heterojunction bipolar transistors (HBT) compared to Field Effect Transistor (FET) devices, as well as their high linearity and fundamentally lower 1/f noise [6] make these an ideal choice.…”

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confidence: 99%

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GHz Class Low-Power Flash ADC for Broadband Communications

Sexton

Tauqeer

Mohiuddin

et al. 2008

2008 International Conference on Advanced Semiconductor Devices and Microsystems

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A low-power (~400mW) high-speed (2-4GS/s) 4-bit Analogue-to-Digital Converter (ADC) based on InP/InGaAs heterojunction bipolar transistors (HBT)has IntroductionHigh-speed, low-resolution analogue-to-digital converters (ADCs) have widespread applications in wired and wireless broadband communications [1], radar receivers [2], digital oscilloscopes [3] and millimetre arrays for radio astronomy [4]. The rapid scaling of transistor and interconnect dimensions has enabled increased chip complexity and performance. In terms of CMOS for example, improvements in high-k dielectric materials have pushed this technology to approach a maximum speed 10-20GHz [5]. However, for ultra-low power designs, alternative materials, such as SiGe or III-V compound semiconductor technologies are the only viable option [5].For mixed-signal applications and high-speed digital logic design, closely matched devices are indispensable. The improved threshold voltage control of heterojunction bipolar transistors (HBT) compared to Field Effect Transistor (FET) devices, as well as their high linearity and fundamentally lower 1/f noise [6] make these an ideal choice. While SiGe HBTs can be used for speeds approaching 77GHz [5], its peak electron velocity occurs at a much higher electric field than InGaAs [7]. Hence to achieve comparable high-speed operation, SiGe HBTs require larger bias voltages which results in increased power dissipation. Also, the low bandgap InGaAs used in the base layer of InP/InGaAs or AlInAs/InGaAs HBTs reduce the turn-on voltage, and thus make these material systems suited for low-power applications.This paper presents the continuing research into developing an ultra-low power ADC based on InP/InGaAs HBTs. The ultimate achievement is to fabricate a 4-bit Flash ADC that operates with a sampling frequency of 2-4GHz, and dissipates less than 400mW. Material Growth and FabricationThe epitaxial layers (shown in Table 1) were grown on a VG 90H solid-source molecular beam Epitaxy (MBE) system on Fe-doped semi-insulating (100) InP substrates. Growth was performed at a relatively low temperature of ~420 o C and used stoichiometric conditions for both the Arsenide and Phosphide materials. Phosphorus was generated from a GaP decomposition source whose operational aspects are described elsewhere [8].

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Section: Introductionmentioning

confidence: 99%

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confidence: 99%

GHz Class Low-Power Flash ADC for Broadband Communications

Sexton

Tauqeer

Mohiuddin

et al. 2008

2008 International Conference on Advanced Semiconductor Devices and Microsystems

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“…However, this has a consequence of increasing the gate leakage current that can only be resolved if a high-k, low defect density material (other than SiO 2 ) is introduced [3]. Even with these enhancements, CMOS technologies are only expected to provide low-resolution circuits up to 10-20GHz [4]. Beyond this region (>40Ghz), SiGe or III-V compound semiconductor technologies are the only viable option [4].…”

Section: Introductionmentioning

confidence: 99%

“…Even with these enhancements, CMOS technologies are only expected to provide low-resolution circuits up to 10-20GHz [4]. Beyond this region (>40Ghz), SiGe or III-V compound semiconductor technologies are the only viable option [4].…”

Section: Introductionmentioning

confidence: 99%

“…However, material choice is also an important factor for low-power applications. While SiGe can be used for speeds approaching 77Ghz [4], its peak electron velocity occurs at a much higher electric field than InGaAs [14]. Hence to achieve comparable high-speed operation, SiGe HBTs require larger bias voltages and thus results in increased power dissipation.…”

Section: Introductionmentioning

confidence: 99%

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