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HE i s a new bipolar process which incorporates polysilicon base/emitter contacts, trench isolation and an advanced base/emitter structure. The i n i t i a l version of the process has a 14GHz fT and will shortly transfer into f u l l production. The final version of the process has a 22GHz fT and has recently finished i t s development phase. T h i s paper describes three aspects of HE. The f i r s t of these is the fabrication sequence i n which a new base-emitter sidewall spacer technique will be outlined. The second aspect to be discussed is the performance of HE transi s t o r s themselves. Finally, three representative integrated c i r c u i t s are described.

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