Process HE: a highly advanced trench isolated bipolar technology for analogue and digital applications

Abstract

HE i s a new bipolar process which incorporates polysilicon base/emitter contacts, trench isolation and an advanced base/emitter structure. The i n i t i a l version of the process has a 14GHz fT and will shortly transfer into f u l l production. The final version of the process has a 22GHz fT and has recently finished i t s development phase. T h i s paper describes three aspects of HE. The f i r s t of these is the fabrication sequence i n which a new base-emitter sidewall spacer technique will be outlined. The second aspect to be discussed is the performance of HE transi s t o r s themselves. Finally, three representative integrated c i r c u i t s are described.

Shallow and Deep Trench Isolation for use in RF-Bipolar IC:s

“…Chemical Mechanical Planarization (CMP) has been widely used in the process flow to realize STI. To further reduce parasitics and crosstalk for sensitive analog radio circuitry, deep trench (DT) isolation is used to replace junction isolation between the devices in bipolar processes [2] and, less common, in CMOS [3].…”

New high-performance complementary bipolar technology featuring 45-GHz NPN and 20-GHz PNP devices

“…The complementary process, HJ, was developed from an earlier NPN-only technology [1] and has been described fully elsewhere [2]. In summary, HJ includes standard NPN transistors, standard vertical PNP transistors, lateral PNP transistors, high and low value polysilicon resistors, low value capacitors (with an optional high value capacitor), integrated inductors, ESD protection and substrate contacts.…”