New high-performance complementary bipolar technology featuring 45-GHz NPN and 20-GHz PNP devices

Wilson, Martin C.; Osborne, P.H.; Thomas, Simon; Cook, T.B.

doi:10.1117/12.360538

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2002

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“…The first method involves optimization by consuming surface epitaxial silicon using a "sacrificial oxidation" technique [3]. The sacrificial oxidation technique is analogous to that of the selective implanted collector but with the advantage of superior control and manufacturability.…”

Section: Experimental Details and Resultsmentioning

confidence: 99%

A 12Volt, 12GHz Complementary Bipolar Technology for High Frequency Analogue Applications

Wilson¹,

Harrington²,

Manson³

et al. 2002

32nd European Solid-State Device Research Conference

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In this paper we report a new 12volt, high performance, highly competitive silicon complementary bipolar technology. NPN and vPNP devices have been fabricated with cut-off frequencies greater than 12GHz and breakdowns not less than 12volts. Two optimization techniques are discussed that can be used to improve the cut-off frequency of the vPNP device independently of the NPN. The resulting process is considered ideally suited to the manufacture of highly linear 1GHz operational amplifiers.

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Section: Experimental Details and Resultsmentioning

confidence: 99%