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A new high performance silicon complementary bipolar technology is introduced. In addition a novel process "enhancement" technique based on a local oxidation is described and demonstrated and NPN devices with cut-off frequencies up to 45GHz and PNP devices of 20GHz have been fabricated. We propose that the technique we have used will allow specific transistors within a circuit to be optimised, as required.

In this paper we report a new 12volt, high performance, highly competitive silicon complementary bipolar technology. NPN and vPNP devices have been fabricated with cut-off frequencies greater than 12GHz and breakdowns not less than 12volts. Two optimization techniques are discussed that can be used to improve the cut-off frequency of the vPNP device independently of the NPN. The resulting process is considered ideally suited to the manufacture of highly linear 1GHz operational amplifiers.

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