Chemical and biological sensors based on organic thin-film transistors

Mabeck, Jeffrey T.; Malliaras, George G.

doi:10.1007/s00216-005-3390-2

Cited by 468 publications

(304 citation statements)

References 59 publications

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“…Charge carrier mobility in these TFTs are comparable to previously reported results, 10,11,25 but the low operating voltage indicates a possibility to function in aqueous media for sensing applications such as medical diagnosis and beverage evaluation by electronic tongues. 8,9 Furthermore, TFTs with microimprinted electrodes may operate at higher frequencies, due to reduced L and higher l, which is necessary for producing potentially competitive low-cost polymeric devices. Nevertheless, improvements in charge carrier mobility on TiO x N y -covered glass substrates might be possible by changing the semiconductor deposition technique, such as casting, 26 or just by employing solvents with a higher boiling point such as trichlorobenzene.…”

Section: Thin-film Transistor Performance Analysismentioning

confidence: 99%

“…The patterning procedure was demonstrated for poly(3-hexylthiophene) (P3HT) transistors, as this is a well-known polymeric semiconductor with several reports in the literature, being already applicable for gas sensing. 8,9 Even though charge carrier mobility in these p-type polythiophene derivatives approaches amorphous silicon, 10,11 it requires high dielectric constants (j) to make it suitable for electronic applications. As already demonstrated by our group, P3HT on titanium oxynitride (TiO x N y ) can provide low-voltage hybrid TFTs but demands shorter channel length to achieve higher frequency operation.…”

Section: Introductionmentioning

confidence: 99%

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Molds and Resists Studies for Nanoimprint Lithography of Electrodes in Low-Voltage Polymer Thin-Film Transistors

Cavallari

Zanchin

Pojar

et al. 2014

Journal of Elec Materi

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A low-cost patterning of electrodes was investigated looking forward to replacing conventional photolithography for the processing of low-operating voltage polymeric thin-film transistors. Hard silicon, etched by sulfur hexafluoride and oxygen gas mixture, and flexible polydimethylsiloxane imprinting molds were studied through atomic force microscopy (AFM) and field emission gun scanning electron microscopy. The higher the concentration of oxygen in reactive ion etching, the lower the etch rate, sidewall angle, and surface roughness. A concentration around 30 % at 100 mTorr, 65 W and 70 sccm was demonstrated as adequate for submicrometric channels, presenting a reduced etch rate of 176 nm/min. Imprinting with positive photoresist AZ1518 was compared to negative SU-8 2002 by optical microscopy and AFM. Conformal results were obtained only with the last resist by hot embossing at 120°C and 1 kgf/cm 2 for 2 min, followed by a 10 min post-baking at 100°C. The patterning procedure was applied to define gold source and drain electrodes on oxide-covered substrates to produce bottom-gate bottom-contact transistors. Poly(3-hexylthiophene) (P3HT) devices were processed on high-j titanium oxynitride (TiO x N y ) deposited by radiofrequency magnetron sputtering over indium tin oxide-covered glass to achieve low-voltage operation. Hole mobility on micrometric imprinted channels may approach amorphous silicon ($0.01 cm 2 /V s) and, since these devices operated at less than 5 V, they are not only suitable for electronic applications but also as sensors in aqueous media.

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Section: Thin-film Transistor Performance Analysismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Molds and Resists Studies for Nanoimprint Lithography of Electrodes in Low-Voltage Polymer Thin-Film Transistors

Cavallari

Zanchin

Pojar

et al. 2014

Journal of Elec Materi

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“…It has been recognized that thin film transistors offer a great deal of promise for applications in various types of sensors, including light sensor, 2,3 pressure sensor, 4 gas sensor, 5 and chemical, biological, and medical sensors. [6][7][8][9] Miniaturization is demanded for all types of sensors because of the need for better portability, higher sensitivity, lower power dissipation, and better device integration. OTFTs can be miniaturized without a reduction in signal to noise ratio since the channel current is not directly related to the area but to the ratio between the channel width and length of the device.…”

Section: Introductionmentioning

confidence: 99%

Highly photosensitive thin film transistors based on a composite of poly(3-hexylthiophene) and titania nanoparticles

Yan

Mok

2009

Journal of Applied Physics

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Organic phototransistors based on a composite of P3HT and TiO 2 nanoparticles have been fabricated, which show high photosensitivity, fast response, and stable performance under both visible and ultraviolet light illumination, and thus they are promising for applications as low cost photosensors. The transfer characteristic of each device exhibits a parallel shift to a positive gate voltage under light illumination, and the channel current increases up to three orders of magnitude in the subthreshold region. The shift in the threshold voltage of the device has a nonlinear relationship with light intensity, which can be attributed to the accumulation of electrons in the embedded TiO 2 nanoparticles. It has been found that the device is extremely sensitive to weak light due to an integration effect. The relationship between the threshold voltage change and the intensity of light illumination can be fitted with a power law. An analytical model has been developed to describe the photosensitive behavior of the devices. It is expected that such organic phototransistors can be developed for sensing different wavelengths based on different semiconducting polymers and semiconducting nanoparticles.

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“…addressable delivery systems for charged biomolecules. We envisage that such ionic circuits will have impact in various fields including sensors 25 , lab-on-a-chip 26 , drug delivery 27 and electrochemical components 28 .…”

mentioning

confidence: 99%

Toward Complementary Ionic Circuits: The npn Ion Bipolar Junction Transistor

2011

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Many biomolecules are charged and may therefore be transported with ionic currents. As a step toward addressable ionic delivery circuits, we report on the development of a npn ion bipolar junction transistor (npn-IBJT) as an active control element of anionic currents in general, and specifically, demonstrate actively modulated delivery of the neurotransmitter glutamic acid. The functional materials of this transistor are ion exchange layers and conjugated polymers. The npn-IBJT shows stable transistor characteristics over extensive time of operation and ion current switch times below 10 s. Our results promise complementary chemical circuits similar to the electronic equivalence, which has proven invaluable in conventional electronic applications.

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Chemical and biological sensors based on organic thin-film transistors

Cited by 468 publications

References 59 publications

Molds and Resists Studies for Nanoimprint Lithography of Electrodes in Low-Voltage Polymer Thin-Film Transistors

Molds and Resists Studies for Nanoimprint Lithography of Electrodes in Low-Voltage Polymer Thin-Film Transistors

Highly photosensitive thin film transistors based on a composite of poly(3-hexylthiophene) and titania nanoparticles

Toward Complementary Ionic Circuits: The npn Ion Bipolar Junction Transistor

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