Chemical and Electrical Properties of ZnS Deposited with DEZ and H₂S by Atomic Layer Deposition Method

Abstract

ZnS thin films were grown by Atomic Layer Deposition (ALD) method with Diethyl- Zinc (DEZ) and hydrogen sulfide (H2S) for the application of a channel layer of OITFT (Organic-Inorganic Thin-Film Transistor). ZnS has many advantages such as high channel mobility, high deposition rate, transparency at room temperature due to the broad band gap (bandgap of ZnS : 3.7 eV), nontoxic characteristic, low resistivity, and less sensitive about oxidation than ZnO. The deposition rate of the ZnS films in our system was about 1.6 Å/cycle. ZnS film was characterized by AES, XRD, Hall-effect measurement.

Effect of rapid thermal annealing on structural and optical properties of ZnS thin films fabricated by RF magnetron sputtering technique

“…As buffer layer in solar cell, II-VI compounds, such as CdS [7,[11][12][13], ZnS [9,14,15], CdZnS [16][17][18][19][20], CdSe [21,22], CdSSe [23], etc., have been usually used. This binary/ternary compound thin film is reported to be synthesized by various techniques such as molecular beam epitaxy (MBE) [24], chemical bath deposition [5,15,25,26], sputtering [9,10,14,27,28], atomic layer deposition [29], etc. Among these, radio frequency (RF) magnetron sputtering technique has sufficient control over the stoichiometry and uniformity to deposit ZnS thin films.…”