Chemical and morphological characterization of photoactive SiOx films electrodeposited on Pt substrate

Krywko‐Cendrowska, Agata; Marot, L.; Steiner, Roland; Mathys, Daniel; Meyer, Ernst; Szklarczyk, Marek

doi:10.1016/j.jelechem.2018.10.060

Cited by 1 publication

(2 citation statements)

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“…In addition, we also identify the O groups by measuring XPS of O 1s to confirm the influence of OH and Si-O conten on passivation performance. According to the relevant literature, [37,38] the XPS of O 1s fitted three peaks (531.55 eV, 532.34 eV, and 533.1 eV) are, respectively, corresponding to C-O, Si-O, and OH groups obtained by XPSPEAK41 software, whose percentages of three groups are shown in Figs. 8 and 9.…”

Section: Xps Analysismentioning

confidence: 99%

“…(x = 1, 2, 3) most, among which part of Si-OH forms SiO x with O replacing H before the thickness of passivation layer reaches 9 nm. [38] According to the analysis of the above XPS of Si 2p, Si + oxide is the main content in silicon suboxide (x ≤ 1), so Si-O-SiH x may form and (SiO x model with Sirich and O-rich) symmetrical structure. Thus, oxygen vacancy and dangling bond of a-SiO x :H microstructure will increase more and the corresponding τ eff and iV oc decrease after the thickness of passivation layer has reached 9 nm on the 100orientated c-Si sustrate as shown in Fig.…”

Section: Xps Analysismentioning

confidence: 99%

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Microstructure evolution and passivation quality of hydrogenated amorphous silicon oxide (a-SiOx:H) on 〈100〉- and 〈111〉-orientated c-Si wafers*

Chen¹,

Zhao²,

Yan³

et al. 2020

Chinese Phys. B

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Hydrogenated amorphous silicon oxide (a-SiO x :H) is an attractive passivation material to suppress epitaxial growth and reduce the parasitic absorption loss in silicon heterojunction (SHJ) solar cells. In this paper, a-SiO x :H layers on different orientated c-Si substrates are fabricated. An optimal effective lifetime (τ eff) of 4743 μs and corresponding implied open-circuit voltage (i V oc) of 724 mV are obtained on 〈100〉-orientated c-Si wafers. While τ eff of 2429 μs and i V oc of 699 mV are achieved on 〈111〉-orientated substrate. The FTIR and XPS results indicate that the a-SiO x :H network consists of SiO x (Si-rich), Si– OH, Si– O– SiH x , SiO2≡Si– Si, and O3 ≡S– Si. A passivation evolution mechanism is proposed to explain the different passivation results on different c-Si wafers. By modulating the a-SiO x :H layer, the planar silicon heterojunction solar cell can achieve an efficiency of 18.15%.

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Section: Xps Analysismentioning

confidence: 99%

Section: Xps Analysismentioning

confidence: 99%