Chemical approaches for electronic doping in photovoltaic materials beyond crystalline silicon

Wei, Xian; Zhang, Pengxiang; Xu, Tailai; Zhou, Huanping; Yang, Bai; Chen, Qi

doi:10.1039/d2cs00110a

Cited by 18 publications

(9 citation statements)

References 434 publications

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“…[34] The dopant and semiconductor could also form a charge-transfer complex through orbital hybridization to achieve charge transfer. [36] And it is expected to be utilized in PSCs by improving electrical properties of metal halide perovskites and promoting charge transport. For example, tetrachloro-1,2-benzoquinone (TCBQ) was inserted into the organic sublattice of 2D perovskite.…”

Section: Introductionmentioning

confidence: 99%

“…Electron acceptor molecule is an important dopant that can receive electrons from the valence band of semiconductor and leave holes in semiconductor, thus optimizing the electrical properties of semiconductor [34] . The dopant and semiconductor could also form a charge‐transfer complex through orbital hybridization to achieve charge transfer [36] . And it is expected to be utilized in PSCs by improving electrical properties of metal halide perovskites and promoting charge transport.…”

Section: Introductionmentioning

confidence: 99%

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Electron Acceptor Molecule Doping Induced π–π Interaction to Promote Charge Transport Kinetics for Efficient and Stable 2D/3D Perovskite Solar Cells

Wang

Chang

et al. 2023

Angew Chem Int Ed

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Although the incorporation of 2D perovskite into 3D perovskite can greatly enhance intrinsic stability, power conversion efficiency (PCE) of 2D/3D perovskite is still inferior to its 3D counterpart due to poor carrier transport kinetics resulted from the quantum and dielectric confinement of 2D component. To overcome this issue, the electron acceptor molecule 1,2,4,5‐tetracyanobenzene (TCNB) was introduced to trigger intermolecular π–π interaction in 2D perovskite along with the electronic doping of 2D/3D perovskite to improve charge transfer efficiency. By virtue of high electron affinity, TCNB can undergo electron transfer reaction and subsequently establish π–π interaction with 1‐naphthalenemethylammonium (NMA) cations, greatly strengthening lattice rigidity and reducing exciton binding energy. Transmission electron microscopy results demonstrate that 2D phases are mainly distributed at grain boundaries, reducing defect density and weakening nonradiative recombination. Meanwhile, the p‐type doping of perovskite by TCNB optimizes energy level alignment at perovskite/hole transport layer interface. Consequently, PCE of champion device is significantly boosted to 24.01 %. The unencapsulated device retains an initial efficiency close to 94 % after exposure to ambient environment for over 1000 h. This work paves a novel path for designing new mixed‐dimensional perovskite solar cells with high PCE and superior stability.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electron Acceptor Molecule Doping Induced π–π Interaction to Promote Charge Transport Kinetics for Efficient and Stable 2D/3D Perovskite Solar Cells

Wang

Chang

et al. 2023

Angew Chem Int Ed

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“…14,30 The incorporation of charge effects induced by electronic doping is considered as an effective strategy of tailoring the fundamental optical, magnetic, electronic, and catalytic properties of materials. [31][32][33][34] For semiconductors devoid of free charge carriers, the dopant-induced charge effects can modify the band structure and redox potential of the Fermi level (E f ) to meet the requirements for efficient SERS substrates. It has been demonstrated that the group 1 elements (H, Li, Na, and K) with small ionic radii can be easily intercalated into the interlayer or channels of a host lattice, thus generating signicant charge effects while maintaining structural integrity.…”

Section: Introductionmentioning

confidence: 99%

Boosting ultrasensitive SERS activity on quasi-metallic tungsten oxide through synergistic vibronic coupling and electromagnetic resonance

et al. 2023

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“…Electrical doping of semiconductor layers is a key strategy for improving the performance of electronic devices because doping-related shifts of the Fermi level ( E F ) can increase charge carrier densities in the layers by orders of magnitude. – Doped films of conjugated polymers including poly(3-hexylthiophene) (P3HT) find their applications in organic and perovskite photovoltaic devices and photodetectors as well as in thermoelectrics . Furthermore, P3HT is a well-studied model system to better understand the fundamental processes at work in doping-related charge transfer and the generation of mobile holes in the semiconductor host.…”

Section: Introductionmentioning

confidence: 99%

Energy-Level Alignment Governs Doping-Related Fermi-Level Shifts in Polymer Films

Hu,

Berteau-Rainville,

Hase

et al. 2023

ACS Appl. Electron. Mater.

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In thin films of doped organic semiconductors, the position of the Fermi level (E F) within the semiconductor fundamental gap depends not only on the dopant loading but also on the energy-level alignment with the substrate. We show that the energy-level alignment of the prototypical conjugated polymer poly(3-hexylthiophene) (P3HT) with the common electrode material indium–tin oxide puts E F far from the midgap and close to the highest occupied molecular orbital (HOMO) level of P3HT already for undoped films, which are intrinsically p-doped through energy-level alignment without dopant admixture. Intentional p-doping with molecular electron acceptors does not necessarily result in notable E F shifts, as we demonstrate by ultraviolet photoelectron spectroscopy (UPS) for the common dopant tetracyanoquinodimethane (TCNQ), which undergoes fractional charge transfer with P3HT. Fluorinated TCNQ derivatives of higher electron affinity (EA), however, do show E F shifts toward the P3HT HOMO, where high EA and dopant loading can put E F into the P3HT-occupied density of states. This renders the conjugated polymer semimetallic and is reminiscent of the degenerate doping scenario found for inorganic semiconductors. By numerical energy-level alignment modeling, which explicitly takes into account the substrate electronic properties, we demonstrate that initial doping-related E F shifts are clearly overestimated if a midgap position of E F is assumed for the undoped organic semiconductor. For P3HT and a series of differently strong p-dopants, we calculate E F positions fully in line with experimental UPS, which also allows for estimating the width of the P3HT HOMO density of states and its doping-related broadening..

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Chemical approaches for electronic doping in photovoltaic materials beyond crystalline silicon

Abstract: This review highlights the recent advances of chemical approaches for electronic doping to aid the future development of next-generation photovoltaic materials.

Cited by 18 publications

References 434 publications

Electron Acceptor Molecule Doping Induced π–π Interaction to Promote Charge Transport Kinetics for Efficient and Stable 2D/3D Perovskite Solar Cells

Electron Acceptor Molecule Doping Induced π–π Interaction to Promote Charge Transport Kinetics for Efficient and Stable 2D/3D Perovskite Solar Cells

Boosting ultrasensitive SERS activity on quasi-metallic tungsten oxide through synergistic vibronic coupling and electromagnetic resonance

Energy-Level Alignment Governs Doping-Related Fermi-Level Shifts in Polymer Films

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