Chemical bath deposition of In2S3 thin films as promising material and buffer layer for solar cells

Stumph, P. S.; Baranova, K. A.; Rogovoy, M. S.; Bunakov, V. V.; Мараева, Е. В.; Tulenin, S. S.

doi:10.1063/1.5087389

Cited by 2 publications

(2 citation statements)

References 6 publications

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“…Various deposition methods have been reported for the fabrication of semiconductor thin films: (i) thermal evaporation [29,30], (ii) sputtering [31], (iii) atomic layer deposition [32], (iv) electrochemical [33], (v) chemical vapor deposition [34], and (vi) chemical bath deposition (CBD) [35][36][37]. Among the physical and chemical methods of thin film deposition, the CBD process is the most economic and technically suitable one (e.g., regarding lab equipment and temperature and pressure requirements) [38].…”

Section: Introductionmentioning

confidence: 99%

Optical and Structural Characterization of Cd-Free Buffer Layers Fabricated by Chemical Bath Deposition

2021

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Chemical bath deposition (CBD) is a suitable, inexpensive, and versatile synthesis technique to fabricate different semiconductors under soft conditions. In this study, we deposited Zn(O;OH)S thin films by the CBD method to analyze the effect of the number of thin film layers on structural and optical properties of buffer layers. Thin films were characterized by X-ray diffraction (XRD) and UV-Vis transmittance measurements. Furthermore, we simulated a species distribution diagram for Zn(O;OH)S film generation during the deposition process. The optical results showed that the number of layers determined the optical transmittance of buffer layers, and that the transmittance reduced from 90% (with one layer) to 50% (with four layers) at the visible range of the electromagnetic spectrum. The structural characterization indicated that the coatings were polycrystalline (α-ZnS and β-Zn(OH)2 to four layers). Our results suggest that Zn(O;OH)S thin films could be used as buffer layers to replace CdS thin films as an optical window in thin-film solar cells.

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Section: Introductionmentioning

confidence: 99%

Optical and Structural Characterization of Cd-Free Buffer Layers Fabricated by Chemical Bath Deposition

2021

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“…In2S3 films can be prepared by different methods, including thermal evaporation [19], CBD [20], spray pyrolysis [21], atomic layer deposition (ALD) [22], electrodeposition [23] and sputtering [24,25]. The most common methods used for the preparation of In2S3 buffer layers are thermal evaporation and CBD methods in the literature and high-efficient thin film PV devices were achieved by applying In2S3 buffer layers deposited by these two methods.…”

Section: Introductionmentioning

confidence: 99%

Effect of Post-thermal Annealing on the Structural, Morphological, and Optical Properties of RF-sputtered In2S3 Thin Films

Akçay¹,

ERENLER²,

ÖZEN³

et al. 2023

Gazi University Journal of Science

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Indium sulfide (In2S3) thin films were deposited on soda lime glass (SLG) substrate by radio frequency (RF) magnetron sputtering technique at 150 °C and then thermally annealed under argon (Ar) atmosphere at 350 °C and 450 °C for a period of 30 min. The effect of post-thermal annealing on the structural, morphological, and optical properties of the films were investigated. The formation of the stable tetragonal β-In2S3 was confirmed by X-ray diffraction (XRD) analysis. It was seen that the thermal annealing treatment at 450 °C improved the crystallization of the films. The change in the surface morphology of the films depending on the post-thermal annealing process were determined by atomic force microscopy (AFM) and scanning electron microscopy (SEM) analyses. The energy dispersive X-ray spectroscopy (EDX) analysis indicated that the films had slightly sulfur (S) deficit composition and the concentration of S slightly increased with the thermal annealing process. The room temperature (RT) photoluminescence (PL) spectra revealed that the films included sulfur vacancies (VS: donor), indium (In) vacancies (VIn: acceptor), indium interstitial (Ini: donor) and oxygen (O) in vacancy of sulfur (OVs: acceptor) defects with strong and broad emission bands at around 1.70 eV, 2.20 eV, and 2.71 eV.

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Chemical bath deposition of In2S3 thin films as promising material and buffer layer for solar cells

Cited by 2 publications

References 6 publications

Optical and Structural Characterization of Cd-Free Buffer Layers Fabricated by Chemical Bath Deposition

Optical and Structural Characterization of Cd-Free Buffer Layers Fabricated by Chemical Bath Deposition

Effect of Post-thermal Annealing on the Structural, Morphological, and Optical Properties of RF-sputtered In2S3 Thin Films

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