Chemical beam epitaxy growth of 1.3 μm InGaAsP/InP double heterostructure lasers using all gas source doping

Abstract

Low threshold 1.3 μm InGaAsP/InP double heterostructure lasers were fabricated using all gas source chemical beam epitaxy (CBE). Gas source doping of n- and p-type InP and InGaAs was successfully achieved using tetraethyltin and diethylzinc. The minimum threshold current density (Jth) for a 1800 μm cavity length laser was 680 A/cm−2. This is lowest Jth value reported for CBE grown double heterostructure lasers at 1.3 μm. These lasers exhibited an internal quantum efficiency (ηi) and internal loss (αi) of 51% and 16 cm−1, respectively. The temperature dependence of the threshold current is described by a single exponential T0 of 51 K.

Solid source molecular beam epitaxy of low threshold 1.55 μm wavelength GaInAs/GaInAsP/InP semiconductor lasers

“…19 Diodes with cavity lengths of 1 mm had an emission wavelength of 1.35 m and a threshold current density J th of 900 A/cm 2 . The characteristic temperature T 0 was 62 K. Unstrained SCH laser diodes also performed well.…”