Chemical bonds in nitrogen-doped amorphous InGaZnO thin film transistors

Xie, Haiting; Zhou, Yan; Zhang, Ying; Chen, Dong

doi:10.1016/j.rinp.2018.11.029

Cited by 16 publications

(6 citation statements)

References 35 publications

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“…After irradiation, the peak for Zn 2p shifts to higher binding energies (1021.79 and 1044.58 eV for ZIF‐8 (MO), 1021.87 and 1044.59 eV for ZIF‐8 (MB)), implying an interaction with MO and MB. Zn 2p 3/2 of ZIF‐8 is deconvoluted into two peaks, attributed to the ZnN bond at 1020.94 eV and the ZnO bond at 1021.48 eV 55,56 . In the presence of ZIF‐8 (MO) and ZIF‐8 (MB), the ZnN bond seems to be replaced by the ZnO bond.…”

Section: Resultsmentioning

confidence: 99%

“…Zn 2p 3/2 of ZIF-8 is deconvoluted into two peaks, attributed to the Zn N bond at 1020.94 eV and the Zn O bond at 1021.48 eV. 55,56 In the presence of ZIF-8 (MO) and ZIF-8 (MB), the Zn N bond seems to be replaced by the Zn O bond. Thus, ZIF-8 undergoes partial hydrolysis in the reaction media, following the detection of Zn O peaks at 1021.43 eV for ZIF-8 (MO) and at 1021.48 eV for ZIF-8 (MB).…”

Section: Nitrogen Adsorption Isothermsmentioning

confidence: 99%

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Adsorption and photoactivity performances of copper(II)–benzene‐1,3,5‐tricarboxylate (Cu‐BTC) and zeolitic imidazolate framework (ZIF‐8): effect of humidity

Tuncel,

Ökte

2023

J of Chemical Tech & Biotech

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BACKGROUNDIn this study, adsorption properties and photocatalytic activities of Cu‐BTC and ZIF‐8 are explored using an anionic dye, methyl orange (MO) and a cationic dye, methylene blue (MB). Effect of humidity on the stabilities and performances of Cu‐BTC and ZIF‐8 is controlled under 40%, 67% and 84% relative humidity (RH) conditions. Cu‐BTC, ZIF‐8 and humidified samples are characterized by various techniques.RESULTSHumidified samples do not exhibit new X‐ray diffraction (XRD) peaks and significant variations in the Scanning electron microscopy (SEM) images and UV‐Vis diffuse reflectance (UV‐Vis DRS) spectra. After degradation experiments, XRD, X‐ray photoelectron spectra (XPS) and UV‐Vis DRS confirm the coexistence of Cu1+ and Cu2+ in Cu‐BTC and the formation of ZnO in ZIF‐8. Reduction in surface area (BET) measurements and detection of N and S signals in energy dispersive X‐ray (EDX) analysis prove interaction of MO and MB. Adsorptions of MO and MB are proposed via electrostatic attraction, Π‐Π interaction, and hydrogen bonding and conform to pseudo‐second order kinetics. Langmuir and Freudlich models describe the adsorption isotherms of MO and MB. Ligand‐to‐metal charge transfer process is principally responsible for the photoactivities of Cu‐BTC and ZIF‐8. Cu‐BTC (84% RH) and ZIF‐8 (84% RH) exhibit the highest performances, following the Langmuir–Hinshelwood kinetics. Stability tests of Cu‐BTC, ZIF‐8 and humidified samples imply their reuse abilities.CONCLUSIONThis study correlates structural characteristics and adsorption abilities/photocatalytic performances of Cu‐BTC and ZIF‐8. Results may offer new ideas into improvement of MOFs as adsorbents and photocatalysts.This article is protected by copyright. All rights reserved.

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Section: Resultsmentioning

confidence: 99%

Section: Nitrogen Adsorption Isothermsmentioning

confidence: 99%

Adsorption and photoactivity performances of copper(II)–benzene‐1,3,5‐tricarboxylate (Cu‐BTC) and zeolitic imidazolate framework (ZIF‐8): effect of humidity

Tuncel,

Ökte

2023

J of Chemical Tech & Biotech

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“…An increase in the temperature induces an increase in trapping holes at the interface, which reduces the channel carriers, resulting in a left shift of V th . For the a-IGZO TFT, oxygen vacancies as free electrons could be thermally excited with increasing temperature, hence the increase in I on . Consequently, when writing “1” to VL, VR needs to be discharged to a lower voltage at a higher temperature to switch on P2, and P2 also needs to overcome the higher current of N2, leading to a larger transition time.…”

Section: Results and Disccusionmentioning

confidence: 99%

“…For the a-IGZO TFT, oxygen vacancies as free electrons could be thermally excited with increasing temperature, hence the increase in I on . 27 Consequently, when writing "1" to VL, VR needs to be discharged to a lower voltage at a higher temperature to switch on P2, and P2 also needs to overcome the higher current of N2, leading to a larger transition time. Besides, the transition time of writing "0" is mainly affected by the right shift of V th of a-IGZO TFT.…”

Section: Thermal Stability Of the Srammentioning

confidence: 99%

Ultraflexible Monolithic Three-Dimensional Static Random Access Memory

Zhang,

Wang,

Zhu

et al. 2024

ACS Nano

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Flexible static random access memory (SRAM) plays an important role in flexible electronics and systems. However, achieving SRAM with a small footprint, high flexibility, and high thermal stability has always been a big challenge. In this work, an ultraflexible six-transistor SRAM with high integration density is realized based on a monolithic three-dimensional (M3D) design. In this design, vertical stacked n-type indium gallium zinc oxide thin film transistors and p-type carbon nanotube transistors share common gate and drain electrodes, respectively, saving interlayer vias used in traditional M3D designs. This compact architecture reduces the footprint of the SRAM cell from a six-transistor to a four-transistor area, saving 33% of the area, and significantly enables the SRAM to have the highest flexibility among the reported ones, withstanding a harsh deforming process (6000 cycles of bending at a radius of 500 μm) without performance degradation. Moreover, this design facilitates the thermal stability of the SRAM under high temperature (333 K). It also exhibits great static and dynamic performance, with the highest normalized hold noise margin of 73.6%, a maximum gain of 151.2, and a minimum static power consumption of 3.15 μW in hold operation among the reported flexible SRAMs. This demonstration provides possibilities for SRAMs to be used in advanced wearable system applications.

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“…However, the electrical performance and stability properties of a-IGZO TFTs still need further improvements for their applications in FPDs and other fields [4,5]. Recently, some researchers—including our group—reported that nitrogen-doping (N-doping) effectively improved the electrical properties (e.g., subthreshold swing (SS) and bias-stress stability) of a-IGZO TFTs by decreasing the number of deep states and oxygen vacancies (Vo) in the device channel layers and reducing the channel/dielectric interface trap density with N atoms incorporated into the a-IGZO film [6,7,8]. However, the field-effect mobility (μ FE ) of the nitrogen-doped a-IGZO (a-IGZO:N) TFT devices also decreases due to the suppression of the oxygen vacancy (Vo) level in their channel layers, the main source of free electrons in oxide semiconductors [9,10].…”

Section: Introductionmentioning

confidence: 99%

Electrical Performance and Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors with Buried-Channel Layers

2019

Self Cite

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To improve the electrical performance and bias-stress stability of amorphous InGaZnO thin-film transistors (a-IGZO TFTs), we fabricated and characterized buried-channel devices with multiple-stacked channel layers, i.e., a nitrogen-doped a-IGZO film (front-channel layer), a conventional a-IGZO film (buried-channel layer), and a nitrogen-doped a-IGZO film (back-channel layer). The larger field-effect mobility (5.8 cm2V−1s−1), the smaller subthreshold swing value (0.8 V/dec, and the better stability (smaller threshold voltage shifts during bias-stress and light illumination tests) were obtained for the buried-channel device relative to the conventional a-IGZO TFT. The specially designed channel-layer structure resulted in multiple conduction channels and hence large field-effect mobility. The in situ nitrogen-doping caused reductions in both the front-channel interface trap density and the density of deep states in the bulk channel layers, leading to a small subthreshold swing value. The better stability properties may be related to both the reduced trap states by nitrogen-doping and the passivation effect of the nitrogen-doped a-IGZO films at the device back channels.

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Chemical bonds in nitrogen-doped amorphous InGaZnO thin film transistors

Cited by 16 publications

References 35 publications

Adsorption and photoactivity performances of copper(II)–benzene‐1,3,5‐tricarboxylate (Cu‐BTC) and zeolitic imidazolate framework (ZIF‐8): effect of humidity

Adsorption and photoactivity performances of copper(II)–benzene‐1,3,5‐tricarboxylate (Cu‐BTC) and zeolitic imidazolate framework (ZIF‐8): effect of humidity

Ultraflexible Monolithic Three-Dimensional Static Random Access Memory

Electrical Performance and Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors with Buried-Channel Layers

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