Chemical cleaning of InP surfaces: Oxide composition and electrical properties

Guivarc’h, A.; L'Haridon, H.; Pelous, G.; Hollinger, G.; Pertosa, P.

doi:10.1063/1.333207

Cited by 78 publications

(40 citation statements)

References 52 publications

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“…The modifications of peak energy distribution with an oxide layer and their attribution in terms of oxide compositions have been well discussed and documented in the literature. 20,24,[26][27][28][29][30][31] Furthermore, referring to the literature and to the experimental data showing a positive shift of the flatband potential by capacitance measurements and new contributions of P 2p and In 3d peaks positively shifted by XPS analyses, the interface was classically characterized by the formation of a thin oxide with a composition close to InPO 4 . For undoped n-InP, under positive external polarization and under illumination, the formation of InPO 4 -like compound could be also suggested from capacitance measurements and XPS analyses (Fig.…”

Section: Resultsmentioning

confidence: 99%

Photopotential Measurements on Undopedn-InP at Open Circuit Potential According to the Aqueous pH

Meldeje¹,

Gonçalves²,

Simon³

et al. 2018

J. Electrochem. Soc.

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In this work we studied some fundamental concepts of n-InP interfacial properties based on acid-base equilibrium in the dark and also after the surface illumination at open circuit voltage (Voc). The variation of the flatband potential on undoped n-InP semiconductor was investigated according to aqueous pH. This study was complemented by the effect of the illumination at Voc conditions through photopotential measurements. The impact of the surface lighting on acid-base equilibrium was analyzed by in-situ interfacial capacitance measurements in the dark and by ex-situ X-ray photoelectron spectrometry. The fundamental properties of many semiconductor/electrolyte systems were monitored by the flatband potential position (E FB ). 1,2Its position governed the interfacial characteristics and controlled the electrochemical properties. A classical way of measuring the variation of the flatband potential position was to change the pH of the medium. Many semiconductors were actually sensitive to the variation of acid-base equilibrium.3-12 For III-V semiconductors such as binary (GaAs 3,5 or GaP 6,7 ) or ternary 8 compounds, the acid-base equilibrium was complicated by the specific adsorption sites which induced localized charges on the surface. 13 Previous works have shown a quasi Nernstian variation of the flatband potential on n-InP for (100) 14 and (111) faces 13 over the whole pH range in aqueous medium and also in non aqueous medium such as acetonitrile 15 and liquid ammonia. 16Acid-base equilibrium was studied in the dark from interfacial capacitance measurements in the depletion region avoiding faradaic transfer at the interface semiconductor/electrolyte. This included changing the voltage of the semiconductor artificially through the use of a potentiostat. The band bending owing to electron depletion in the semiconductor (SC) changed depending on the voltage. In the depletion region the Boltzmann relation described the distribution of electrons in the space charge region and the electric field was determined by Gauss'law. Poisson's equation could be solved within that region to give the Mott-Schottky equation that links the reverse square of the capacitance (C) to the interfacial polarization (E). 17 Under depletion conditions the flatband potential was actually deduced from C −2 = f(E) straight line which extrapolation gave E FB for a zero value of C −2 . There are other ways to evaluate the flatband potential such as measuring the photopotential at the open circuit voltage (Voc). As a function of radiation intensity the photopotential was the change in the Fermi level due to the promotion of electrons to the conduction band, and it reached theoretically a maximum at the flatband potential. 13,18 In this paper acid-base equilibrium were further discussed on undoped nInP in which the low doping level led to a space charge region strongly different as compared to high doped n-InP. 9,[13][14][15][16]18 This was particularly true in terms of surface electrical field, charge, capacitance, layer of the space charge re...

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Section: Resultsmentioning

confidence: 99%

Photopotential Measurements on Undopedn-InP at Open Circuit Potential According to the Aqueous pH

Meldeje¹,

Gonçalves²,

Simon³

et al. 2018

J. Electrochem. Soc.

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“…14,15,20,21 While the analysis of insulating films can be complicated by charging and preferentially sputtering, it is a valuable tool in determining the primary chemical compounds that make up the grown oxides.…”

Section: Resultsmentioning

confidence: 99%

“…In order to differentiate between these two compounds, the measured BE shifts are compared with those reported by previous researchers. 20,23,21,[24][25][26][27][28][29][30][31] While the reported BE shifts vary, the average shift between In 2 O 3 and InP is ϳ0.8 eV and between InPO 4 and InP is ϳ1.45 eV.…”

Section: B Binding Energy Analysismentioning

confidence: 98%

“…20,23,[24][25][26]28,30,31,33 Similarly the average of the reported BE shift between InP and P 2 O 5 is 6.6 eV. 20,23,24,[26][27] The only available reference P 2p data for the GaP system has been reported by Mizokawa and Komoda. 14 They observed a shift of 5.8 eV between GaP and GaPO 4 and a shift of 5.5 eV between GaP and P 2 O 5 .…”

Section: B Binding Energy Analysismentioning

confidence: 99%

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Thermal oxides of In0.5Ga0.5P and In0.5Al0.5P

Pulver¹,

Wilmsen²,

Niles³

et al. 2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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An investigation of the chemical composition of wet thermal oxides grown on In0.5Ga0.5P and In0.5Al0.5P is reported. The oxides were grown in the temperature range 500–650 °C. An estimate of the expected oxide composition was obtained by the construction of three-dimensional phase diagrams of the In–Ga–P–O and In–Al–P–O systems. These diagrams indicate that under thermodynamic equilibrium, the oxide layers should be composed primarily of mixtures of InPO4 and GaPO4 on In0.5Ga0.5P and InPO4 and AlPO4 on In0.5Al0.5P. X-ray photoemission spectroscopy (XPS) sputter profiles were used to determine the distribution of elements in the oxide layers and to identify the chemical compounds. The binding energy shifts observed in the XPS data suggests that the oxides are composed primarily of metal phosphates with low concentrations of the metal trioxides. At lower growth temperatures, the oxides composition is uniform with depth, but there is an increasing depletion of In near the substrate interface as the growth temperature increases.

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“…In order to develop these technologies, oxidation of III Á/V compounds, in particular GaAs, has been extensively studied [1 Á/3] with emphasis on surface-analytical techniques [4 Á/6].I n vestigations have also focused on InP, an attractive candidate for a wide range of applications. Various devices using InP have been fabricated including metal Á/ insulator Á/semiconductor field effect transistors (MISFETs), photo-electrochemical solar cells [7], light emitting diodes [8] and components for optical fiber communications [9]. But in contrast to Si, the thermal oxide formed on InP is of low quality and tends to be too conductive for use as a gate insulator.…”

Section: Introductionmentioning

confidence: 99%

Composition and growth of thin anodic oxides formed on InP (100)

Djenizian

Sproule

Moisa

et al. 2002

Electrochimica Acta

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Chemical cleaning of InP surfaces: Oxide composition and electrical properties

Cited by 78 publications

References 52 publications

Photopotential Measurements on Undopedn-InP at Open Circuit Potential According to the Aqueous pH

Photopotential Measurements on Undopedn-InP at Open Circuit Potential According to the Aqueous pH

Thermal oxides of In0.5Ga0.5P and In0.5Al0.5P

Composition and growth of thin anodic oxides formed on InP (100)

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