2021
DOI: 10.1021/acsanm.1c03419
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Chemical Cutting of Network Nodes in Polymeric Carbon Nitride for Enhanced Visible-Light Photocatalytic Hydrogen Generation

Abstract: Polymeric carbon nitride (C3N4) has been arising as an important semiconductor photocatalyst for photocatalytic hydrogen evolution and pollutant removal for solving the ever-pressing energy crisis and environmental issues. The crystallinity, degree of polymerization, and defect formation of the C3N4 molecular structure exhibit a profound effect on its photocatalytic performance. Herein, a facile method was proposed to introduce a certain amount of nitrogen vacancies in C3N4 by calcining trithiocyanuric acid an… Show more

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Cited by 9 publications
(7 citation statements)
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“…39,40 The Urbach tail is attributed to the electronic states located within the band gap, known as midgap states. 18 According to the Kubelka–Munk function plot shown in Fig. 5(b), the intrinsic band gap value is 2.75 eV for all samples.…”
Section: Resultsmentioning
confidence: 84%
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“…39,40 The Urbach tail is attributed to the electronic states located within the band gap, known as midgap states. 18 According to the Kubelka–Munk function plot shown in Fig. 5(b), the intrinsic band gap value is 2.75 eV for all samples.…”
Section: Resultsmentioning
confidence: 84%
“…The percentage of the bridging tertiary N atoms (N2, N-[C] 3 ) decrease, indicating some tertiary N atoms are missing to form nitrogen defects located at the tertiary nitrogen lattice sites. 18 The inner N-bridge vacancies are related to the N defects, and formation of edge N-bridge vacancies induces the additional NH x group. That explains why 2SCN has highest content of N defects observed in EPR spectra.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…As shown in the N 1 s spectrum in Figure 7c, we can see three peaks at 398.7, 400.5, and 404.4 eV. The peak at 398.7 eV corresponds to the sp 2 CNC bond in the triazine ring, the peak at 400.5 eV is attributed to the N(C) 3 group, and the peak at 404.4 eV is related to the CNH group, [ 46 ] where the O 1 s region shows a peak (Figure 7d) with a binding energy of 531.2 eV, which is attributed to the TiO bond and the Zn–O bond. The binding energies at 1020.9 and 1,044.1 eV in Figure 7e correspond to Zn 2 p 3/2 and Zn 2 p 1/2 , respectively.…”
Section: Resultsmentioning
confidence: 99%
“…Among numerous existing materials, graphitic carbon nitride stands out owing to its excellent physical and chemical stability, narrow band gap, and facile fabrication. The above features enable carbon nitride to be applied in water splitting. Nevertheless, the disadvantages of carbon nitride cause limited photocatalytic ability, including a small surface area and insufficient visible-light-harvesting ability. Much effort has been devoted to overcoming the above defects to boost its photocatalytic performance, such as metal and nonmetal atom doping, morphology control, creating heterojunction with other materials, and introducing vacancies. Among these strategies, the introduction of metal and nonmetal atoms (B, F, S, O, Fe, Mo) is prospective for promoting the catalytic ability of carbon nitride. Long et al prepared O-doped carbon nitride by a one-step annealing way . The O-doped carbon nitride with a modified texture exhibited improved photocatalytic activity.…”
Section: Introductionmentioning
confidence: 99%