Chemical defect explanation for the effect of postdeposition treatments on CuInSe2

Otte, Karsten; Chassé, Thomas; Lippold, G.; Rauschenbach, B.; Szargan, R.

doi:10.1063/1.1428096

Cited by 11 publications

(8 citation statements)

References 25 publications

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“…GaAs, GAP, InP, and ZnSe) hydrogen impurities, being an amphoteric center, do not produce free carriers, yet hydrogen does dope chalcopyrite [20]. Hydrogen has been experimentally demonstrated to cause p-to-n conductivity-type conversion in CuInSe 2 through ion implantation [21]. This was further confirmed by first principle calculations [20] shown in figure 2.…”

Section: Hydrogen (H)mentioning

confidence: 70%

Doping and alloying of kesterites

et al. 2019

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Attempts to improve the efficiency of kesterite solar cells by changing the intrinsic stoichiometry have not helped to boost the device efficiency beyond the current record of 12.6%. In this light, the addition of extrinsic elements to the Cu 2 ZnSn(S,Se) 4 matrix in various quantities has emerged as a popular topic aiming to ameliorate electronic properties of the solar cell absorbers. This article reviews extrinsic doping and alloying concepts for kesterite absorbers with the focus on those that do not alter the parent zinc-blende derived kesterite structure. The latest state-of-the-art of possible extrinsic elements is presented in the order of groups of the periodic table. The highest reported solar cell efficiencies for each extrinsic dopant are tabulated at the end. Several dopants like alkali elements and substitutional alloying with Ag, Cd or Ge have been shown to improve the device performance of kesterite solar cells as compared to the nominally undoped references, although it is often difficult to differentiate between pure electronic effects and other possible influences such as changes in the crystallization path, deviations in matrix composition and presence of alkali dopants coming from the substrates. The review is concluded with a suggestion to intensify efforts for identifying intrinsic defects that negatively affect electronic properties of the kesterite absorbers, and, if identified, to test extrinsic strategies that may compensate these defects. Characterization techniques must be developed and widely used to reliably access semiconductor absorber metrics such as the quasi-Fermi level splitting, defect concentration and their energetic position, and carrier lifetime in order to assist in search for effective doping/alloying strategies.

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Section: Hydrogen (H)mentioning

confidence: 70%

Doping and alloying of kesterites

et al. 2019

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“…͑iii͒ H can attach to the In Cu ϩ2V Cu complex, giving a transition E H (ϩ/Ϫ)ϭE c Ϫ0.15 eV, i.e., a rather shallow donor. This explains the observed 8,20 fact that hydrogenation of CuInSe 2 pins the Fermi level at E c Ϫ0.1(Ϯ0.1) eV, converting the material to n type.…”

mentioning

confidence: 75%

“…Figure 1 shows the formation energy for H in CuInSe 2 using chemical potentials correspoding to Cu ϭϪ0.42 eV, In ϭϪ1.30 eV, and Se ϭ0, i.e., Cu-poor, In-rich, Se-rich conditions, similar to what is used in hydrogenation experiments. 8,9 The formation energies are depicted both for a source of atomic H ͑left-hand-side scale͒, and molecular H 2 ͑right-hand-side scale͒. We see that:…”

mentioning

confidence: 96%

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Doping of chalcopyrites by hydrogen

Kılıç

Zunger

2003

Applied Physics Letters

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First-principles total-energy calculations for hydrogen impurities in CuInSe2 (CIS) and CuGaSe2 (CGS) show that H+ takes up the Cu–Se bond center position, whereas H0 and H− take up tetrahedral interstitial site next to In (in CIS) or Ga (in CGS). Hydrogen creates a negative-U center (i.e., H0 is never stable), with a (+/−) transition level at Ec−0.39 eV in CIS, and Ec−0.57 eV in CGS. However, once combined with the 2VCu−+IIICu2+ complex, hydrogen forms shallower centers with transition levels at Ec−0.15 eV in CIS, and Ec−0.39 eV in CGS. We conclude that hydrogen could convert CIS to n type, but not CGS.

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“…Hydrogen introduced to CIGS absorber neutralizes negatively charged copper vacancies, reduces the indium oxide, enhances in-diusion of indium and may activate selenium vacancy formation at the surface [24]. Hence, the post-selenization annealing at forming gas atmosphere reveals to be the most suitable for high-eciency CIGS absorber solar cell formation.…”

Section: Resultsmentioning

confidence: 99%

Influence of Flash Lamp Annealing on the Optical Properties of CIGS Layer

et al. 2014

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Copper indium gallium diselenide (CIGS) becomes more signicant for solar cell applications as an alternative to silicon. The quality of the layer has a critical impact on the nal eciency of the solar cell. An inuence of the post-deposition millisecond range ash lamp annealing on the optical and microstructural properties of the CIGS lms was investigated. Based on the Raman and photoluminescence spectroscopy, it is shown that ash lamp annealing reduces the defect concentration and leads to an increase of the photoluminescence intensity by a factor of six compared to the nonannealed sample. Moreover, after ash lamp annealing the degradation of the photoluminescence is signicantly suppressed and the absolute absorption in the wavelength range of 2001200 nm increases by 25%.

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Chemical defect explanation for the effect of postdeposition treatments on CuInSe2

Cited by 11 publications

References 25 publications

Doping and alloying of kesterites

Doping and alloying of kesterites

Doping of chalcopyrites by hydrogen

Influence of Flash Lamp Annealing on the Optical Properties of CIGS Layer

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