Influence of Flash Lamp Annealing on the Optical Properties of CIGS Layer

Abstract

Copper indium gallium diselenide (CIGS) becomes more signicant for solar cell applications as an alternative to silicon. The quality of the layer has a critical impact on the nal eciency of the solar cell. An inuence of the post-deposition millisecond range ash lamp annealing on the optical and microstructural properties of the CIGS lms was investigated. Based on the Raman and photoluminescence spectroscopy, it is shown that ash lamp annealing reduces the defect concentration and leads to an increase of the photoluminescence intensity by a factor of six compared to the nonannealed sample. Moreover, after ash lamp annealing the degradation of the photoluminescence is signicantly suppressed and the absolute absorption in the wavelength range of 2001200 nm increases by 25%.