1959
DOI: 10.1149/1.2427397
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Chemical Etching of Silicon

Abstract: The kinetics of the etching of silicon in the system HF, HNO~, and H~O was studied as a function of the composition of the etchant at 25~ A triaxial plot of the etch rate vs. composition of the etchant shows two extreme modes of behavior. In the region of high nitric acid compositions, etch rates are functions only of the hydrofluoric acid concentration. In the region of high hydrofluoric acid compositions, nitric acid concentration determines the etch rates. The kinetic behavior in the latter region is compli… Show more

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Cited by 272 publications
(191 citation statements)
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“…The exponential relationship between the mass loss and the HF concentration may indicate a phenomenon of auto-catalysis as it has been observed for instance during the HF etching of silicon oxide [31,32]. On one hand, the reaction products could increase the etch rate.…”
Section: Preliminary Study: Determination Of Adequate Etching Conditionsmentioning
confidence: 87%
“…The exponential relationship between the mass loss and the HF concentration may indicate a phenomenon of auto-catalysis as it has been observed for instance during the HF etching of silicon oxide [31,32]. On one hand, the reaction products could increase the etch rate.…”
Section: Preliminary Study: Determination Of Adequate Etching Conditionsmentioning
confidence: 87%
“…Most of the authors agree that the active agent of silicon etching is not NO 3 À , but an intermediate nitrogen species in the oxidation state 13. [25][26][27][28] We suppose that the active agent is similar in the etching of SiC and the accelerated etching could be due to the higher intermediate stability in the closed system. In an open system, the gas phase reaction product of nitrogen reduction can escape and this can shift the equilibrium, which lowers the probability of etching.…”
Section: Resultsmentioning
confidence: 99%
“…The etch reaction stops as it is starved for charge carriers. 20 Additional brief etch exposures are made to mixtures of 1:40:15 HNA and KMnO 4 /HF. These solutions help to remove certain stains and haze, which are left by the previous reactions.…”
Section: Methodsmentioning
confidence: 99%