Chemical Lift-Off Process for Blue Light-Emitting Diodes

Lin, Chia-Feng; Dai, Jing-Jie; Wang, Guei-Miao; Lin, Min‐Der

doi:10.1143/apex.3.092101

Cited by 31 publications

(34 citation statements)

References 15 publications

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“…We can also observe in Fig. 5 that the sidewall of the a-plane (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) should only be formed by etching the inclined plane of the a-plane (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) first.…”

Section: Resultsmentioning

confidence: 77%

“…Overall, we propose a complete and reasonable mechanism for the etching behavior of the whole KOH etching on GaN, and the experimental result is consistent with our theory. 5 The diagram of the shrinkage motion for (10-1-1) and (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) The study of wet etching on GaN surface by potassium……”

Section: Resultsmentioning

confidence: 99%

“…Although CLO developed late, it is now earning considerable attention. CLO can avoid possible damages induced by high temperature in the LLO process and promote mass production, cost reduction, and film quality [13,14].…”

Section: Introductionmentioning

confidence: 99%

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The study of wet etching on GaN surface by potassium hydroxide solution

et al. 2016

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Potassium hydroxide solution was used to etch un-doped GaN grown on the sapphire substrate at 180 and 260°C. We illustrated the etching phenomenon in detail and probed its mechanism in the wet etching process. By multiplying the planar density and the number of dangling bonds on the N atom, we proposed the etching barrier index (EBI) to describe the difficulty degree of each lattice facet. The raking of EBI will be ?cCombining the EBI with SEM results, we thoroughly studied the whole etching process. We confirmed that in our research, KOH wet etching on GaN starts from the r-plane instead of the ?c-plane or -c-plane, which differs from other studies. We also found that during the high-temperature etching process, there are two etching approaches. In one, the etching begins vertically from the top to the bottom, then horizontally, and finally reversely from the bottom to the top. In the other, etching pits will develop into a hexagonal hole of the sidewall of m-plane.

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Section: Resultsmentioning

confidence: 77%

Section: Resultsmentioning

confidence: 99%

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The study of wet etching on GaN surface by potassium hydroxide solution

et al. 2016

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“…While several research groups have reported that CrN [5,6] and ZnO [7,8] can be used as not only buffer layers for GaN epitaxial growth but also sacrificial layers, that can later be laterally etched by the CLO process. Moreover, AlN thin film was also applied for sacrificial layer to fabricate InGaNbased LEDs on triangle-shaped and truncated-triangle-striped patterned sapphire [9,10]. Except the materials mentioned above, Ga 2 O 3 can also be selectively etched by a hydrofluoric (HF) solution to remove epilayers from sapphire substrate.…”

Section: Introductionmentioning

confidence: 99%

Study on GaN epilayer transferring to Cu substrate from sapphire substrate using Ga 2 O 3 sacrificial layer

Horng

Wuu

et al. 2012

SPIE Proceedings

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GaN epilayer can be grown on sapphire substrate with a Ga 2 O 3 sacrificial layer. It was employed for the epilayer transferring from sapphire substrate to Cu substrate using the chemical lift-off process application. The (-201) oriented β-Ga 2 O 3 thin film was first deposited on the c-plane sapphire substrate, followed by the GaN growth via metalorganic vapor phase epitaxy under N 2 and H 2 environment in sequence. The crystal quality of GaN epilayer can be improved dramatically with the regrowth in a H 2 ambient. A GaN epilayer with an electroplated copper substrate was demonstrated using a chemical lift-off process where the Ga 2 O 3 sacrificial layer can be laterally etched out with a hydrofluoric solution. It is worthy to mention that the separated sapphire substrate can be cleaned and reused for LED epitaxial growth next time. It is benefiting the cost down for the LED fabrication and Green Photonics Development.

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“…The doping selective etching process on heavy doped GaN:Si layers had been reported for the chemical lift-off process in InGaN LED structures. 13,14,15,16 Most of the embedded air-gap structures in the InGaN LEDs were fabricated through the epitaxial re-growth process.…”

mentioning

confidence: 99%

InGaN Flip-Chip Light-Emitting Diodes With Embedded Air Voids as Light-Scattering Layer

Yeh¹,

Sheu²,

Lee

et al. 2013

IEEE Electron Device Lett.

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InGaN-based light-emitting diode (LED) with an embedded air-gap disks structure was fabricated through a laser drilling process and an electrochemical (EC) wet etching process. The disk-shaped air-gap structure was formed surrounding the laser-drilled hole as a light reflective structure to enhance the light extraction efficiency. The light output power of the treated LED structure had an approximate 22% enhancement when compared to a conventional LED at 20 mA.High light emission intensity of the treated LED structure is observed at the 40µm-diameter embedded air-disk patterns on the mesa region. The InGaN LED structures with the laser-drilling holes and the embedded air-disks can reduce the light trapping effect and increase the light extraction efficiency at the device's central mesa region.

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Chemical Lift-Off Process for Blue Light-Emitting Diodes

Cited by 31 publications

References 15 publications

The study of wet etching on GaN surface by potassium hydroxide solution

The study of wet etching on GaN surface by potassium hydroxide solution

Study on GaN epilayer transferring to Cu substrate from sapphire substrate using Ga 2 O 3 sacrificial layer

InGaN Flip-Chip Light-Emitting Diodes With Embedded Air Voids as Light-Scattering Layer

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