Chemical Mechanical Polish for Nanotechnology

Nolan, L.; Cadien, Ken

doi:10.1007/978-3-7091-0424-8_10

Cited by 6 publications

(9 citation statements)

References 65 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These are the very important factors for determining the polishing performance and for understanding the CMP process. Major changes in the nanoparticles-substrate interactions can appear as a result of a variation in the nanoparticle size distribution in the slurry, due to contamination of oversized nanoparticles or loss of the slurry stability [4,7,17]. Thus, the MRR response can vary and can be manifested in the poor control process increasing the number of surface deformations, giving birth to micro/nano-scale defects.…”

Section: Technological and Technical Issuesmentioning

confidence: 99%

“…By scanning with an atomic force microscope (AFM) of the selective layer after the chemical mechanical planarization (CMP) process it is found that the surface of the oxide layer is removed at different rates depending on the depth of removal and the pH of the solution. CMP is a material removal and surface smoothing process, which is possible by the combination of chemical and mechanical interactions [4][5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

“…In the literature, there are numerous studies on similar topics [10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26] applied to the copper CMP of integrated circuits. It is worth mentioning that the present study intends to extend to other fields, namely to surfaces coated through selective transfer (the surfaces of the selective layer) in the friction process, considering the slurry pH (important for removal through CMP of the selective layer) [7,[22][23][24][25][26], H 2 O 2 (the most common oxidant) [27][28][29][30][31][32][33], size [21,[28][29][30][31], and concentration [12,21,34] of nanoparticles used in the CMP slurry. Thus, this paper explores the pH effect at a constant H 2 O 2 concentration on the etching and polishing behavior of the selective layer and the influences on size and concentration of nanoparticles during selective layer surface CMP.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Chemical-Mechanical Impact of Nanoparticles and pH Effect of the Slurry on the CMP of the Selective Layer Surfaces

Ilie

Ipate

2017

Lubricants

View full text Add to dashboard Cite

This paper provides a tribochemical study of the selective layer surface by chemical mechanical planarization (CMP). CMP is used to remove excess material obtained in the process of selective transfer. The paper aims at a better understanding of the planarization (polishing) and micromachining. The planarization becomes effective if the material removal rate (MRR) is optimal and the surface defects are minimal. The pH of the slurry plays a very important role in removing the selective layer by CMP, and hydrogen peroxide (H 2 O 2 ) is the most common oxidizer used in CMP slurry. The purpose of this paper is the analysis of the pH effect on the etching rate (ER) and on the behavior of selective layer polishing by a constant concentration of H 2 O 2 and the influence of nanoparticles size and concentration on selective layer surface CMP. The nanoparticle size used is 250 nm. The MRR results through CMP and ER have been shown to be influenced by the presence of oxides on the selective layer surface and have been found to vary with the slurry pH at constant H 2 O 2 concentrations. The CMP slurry plays an important role in the CMP process performance and should be monitored for optimum results and minimal surface defects. The paper analyzes the impact of chemical-mechanical, inter-nanoparticle, and pad-nanoparticle-substrate interactions on CMP performance, taking into account the state of friction at the interface, by measuring the friction force. Selective layer CMP optimization studies were required to control the chemical and mechanical interactions at the interface between the slurry and the selective layer, the slurry chemistry, the properties, and the stability of the suspended abrasive nanoparticles.

show abstract

Section: Technological and Technical Issuesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Chemical-Mechanical Impact of Nanoparticles and pH Effect of the Slurry on the CMP of the Selective Layer Surfaces

Ilie

Ipate

2017

Lubricants

View full text Add to dashboard Cite

show abstract

“…Large quantities of different metal oxide nanoparticles are used in the chemical mechanical polishing (CMP) process, in which metal or dielectric films are modified and selectively abraded to achieve highly planar surfaces [4,5]. In addition to silica, ceria particles have also been used for silicon oxide CMP [4]. Ceria particles offer high oxide removal rate due to their rough surface and possible chemical reactivity with silicon dioxide compared to other abrasives used in oxide CMP [6].…”

Section: Introductionmentioning

confidence: 99%

“…The semiconductor industry, in particular, takes advantage of silica slurries during semiconductor manufacturing [1e3]. Large quantities of different metal oxide nanoparticles are used in the chemical mechanical polishing (CMP) process, in which metal or dielectric films are modified and selectively abraded to achieve highly planar surfaces [4,5]. In addition to silica, ceria particles have also been used for silicon oxide CMP [4].…”

Section: Introductionmentioning

confidence: 99%