Chemical Mechanical Polishing of Polyarylether Low Dielectric Constant Layers by Manganese Oxide Slurry

Hara, Tohru; Tomisawa, Tomohiro; Kurosu, Toshiaki; Doy, Toshiro

doi:10.1149/1.1391936

Cited by 32 publications

(9 citation statements)

References 5 publications

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“…When 1 wt% MnO 2 was added to 10 wt% silica, the RRs of SiC were still relatively high at ∼1200 nm h −1 . Since MnO 2 by itself is a good abrasive, oxidizer and was used to polish Cu, SiO 2 , low-K dielectrics films and different types of crystalline SiC films, 22,24,[28][29][30][31] we polished a-SiC wafers with 1 wt% MnO 2 powder alone and found that the RRs were only ∼260 nm h −1 , perhaps due to the reduced abrasive action. These data suggest the possibility of strong interaction between the copper and manganese based additives and the a-SiC surface but also emphasize the need for abrasive action to obtain high RRs.…”

Section: Resultsmentioning

confidence: 99%

Effect of Transition Metal Compounds on Amorphous SiC Removal Rates

Lagudu

Babu

2014

ECS J. Solid State Sci. Technol.

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We show here that transition metal compounds when used as additives to silica dispersions enhance a-SiC removal rates (RRs). Silica slurries containing KMnO 4 gave RRs as high as 2000 nm h −1 at pH 4. Addition of CuSO 4 to this slurry further enhanced the RRs to ∼3500 nm h −1 at pH 6. Furthermore, addition of a low concentration of 250 ppm Brij-35 to this slurry suppressed the RRs of SiO 2 to zero, while retaining the RRs of a-SiC at ∼2700 nm h −1 , a combination of RRs that is appropriate for hard mask polishing. The underlying mechanisms causing the enhancement in the RRs of a-SiC in the presence of transition metal compounds is discussed based on the RR data and XPS analysis of post-polished wafer surfaces. It is shown that a mixed redox system consisting of the oxidation of a-SiC by KMnO 4 enhanced by the catalytic activity of the Cu(II) salt is responsible for the rapid oxidation of a-SiC and the observed enhancement in polish rate with silica based slurries. The adsorption characteristics of Brij-35 on the oxide and carbide surfaces are described based on thermogravimetry data and in achieving the desired polish rate selectivity. Amorphous SiC (a-SiC) thin films, deposited at a low temperature of ∼400• C using a plasma enhanced chemical vapor deposition (PECVD) process, have excellent chemical and temperature resistance and a wide bandgap. These characteristics make them suitable as etch masking layers during advanced semiconductor, solar cell and micro-electro mechanical system (MEMS) fabrication.1-16 Examples of these applications include deep etching of glass or silicon, protection of low-K dielectric films, as a stop layer in STI CMP, etc. 10,12,14 The planar surface necessary to use a-SiC as a hard mask in these applications can be potentially achieved using chemical mechanical planarization (CMP).14 Since, the a-SiC hard mask layers typically protect an underlying dielectric material, generally SiO 2 , the CMP polish process must be selective to it. To the best of our knowledge slurries that can selectively polish SiC over SiO 2 have not been reported.Early work on developing slurries for 6H-SiC CMP showed that Cr 2 O 3 -based slurries increased the removal rates (RRs) compared to the traditional abrasives and oxidizers. 24 reported that slurries containing "soft functionalized particles" coated with several layers of "transition metal catalysts" yielded RRs ranging from 100 nm h −1 to 2500 nm h −1 depending on the concentration of the additives, the abrasives used and the operating conditions. The final surface quality was reported to be very good. In all these cases where high RRs were reported, 22,24 the effect of pressure and other operating conditions, the role of pH, the mechanism of the polish process and the role of various additives that are typically required for evaluating CMP processes were not discussed. More importantly, no slurries that lead to a selective removal of any type of SiC over * Electrochemical Society Active Member.z E-mail: babu@clarkson.edu SiO 2 that is needed for mask ...

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Section: Resultsmentioning

confidence: 99%

Effect of Transition Metal Compounds on Amorphous SiC Removal Rates

Lagudu

Babu

2014

ECS J. Solid State Sci. Technol.

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“…Polishing performance and particle characterization.-The fused silica glass of 18 × 14 × 6.792 mm 3 After the polishing procedure, the glass substrate was cleaned using the ultrapure water solution and then dried off for observation.…”

Section: Methodsmentioning

confidence: 99%

“…The Chemical mechanical polishing (CMP) technology was first put forward in 1965 by Monsanto. [1][2][3] It started as a local and global planarization technology to enhance optical lithography process windows and metal interconnect reliability. 4,5 The yield enhancement brought by CMP, has lead to the widespread acceptance of CMP for state-of-the-art interconnect applications, namely,interlayer dielectric and tungsten plugs 6 over other planarization technologies such as etchback.…”

mentioning

confidence: 99%

Enhancement in Surface Finish by Modification of Basic Colloidal Silica with Silane in Chemical Mechanical Polishing

Sivanandini

Dhami²,

Dhami

et al. 2014

ECS J. Solid State Sci. Technol.

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Chemical Mechanical Polishing (CMP) is an indispensible step in the Polishing of glass and ceramic surfaces. About 90% of semiconductor devices like integrated circuits (ICs) and Phase-change memory (PCM) device fabrication are done to attain globally planarized surface with good surface finish and excess material removal rate. One of the critical consumables in the CMP process is abrasive slurry containing both abrasives and chemicals acting together. To improve the chemical mechanical polishing performance, abrasive particles of Basic Colloidal silica was modified with Vinyl Tris(2-methoxyethoxy) silane (VTMS) through silanization reaction with surface hydroxyl group. The modified abrasive slurry exhibited a better dispersibility and stability in aqueous fluids which resulted in the improvement of surface finish in comparison to conventional process. The results of comparative study between pure basic colloidal silica slurry and modified slurry of VTMS + Basic Colloidal silica indicated a better surface finish quality with average Surface Roughness values(Ra) values in the range of 0.28 nm −0.41 nm on five samples when polished for four hours.

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“…As manganese oxide has been revealed to have some interesting characteristics, several corresponding studies have been performed. [22][23][24][25][26][27][28][29][30][31][32][33][34][35][36] Some of these studies reported that manganese oxide slurry polishes several materials such as tungsten, copper, SiO 2 , and low dielectric constant materials.…”

Section: Introductionmentioning

confidence: 99%

Mn₂O₃ Slurry Achieving Reduction of Slurry Waste

Kishii

Nakamura

Hanawa

et al. 2012

Jpn. J. Appl. Phys.

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Fumed silica is widely used for SiO2 chemical mechanical polishing (CMP). In semiconductor processes, only fresh slurry is used, the used slurry being disposed of. We have demonstrated that Mn2O3 abrasive slurry polishes dielectric SiO2 film, giving 4 times the removal rate of conventional fumed silica slurry. The higher removal rate reduces the total amount of slurry used, consequently reducing the amount of used slurry waste. The removal rate of Mn2O3 slurry remains constant for solid concentrations between l and 10 wt %, and stays constant without pad conditioning. These characteristics are very useful for slurry reuse. Remanufacture of Mn2O3 slurry from used slurry has been demonstrated, and the removal rates of the remanufactured and fresh slurries are the same. Reuse and remanufacturing drastically reduce the amount of waste.

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Chemical Mechanical Polishing of Polyarylether Low Dielectric Constant Layers by Manganese Oxide Slurry

Cited by 32 publications

References 5 publications

Effect of Transition Metal Compounds on Amorphous SiC Removal Rates

Effect of Transition Metal Compounds on Amorphous SiC Removal Rates

Enhancement in Surface Finish by Modification of Basic Colloidal Silica with Silane in Chemical Mechanical Polishing

Mn₂O₃ Slurry Achieving Reduction of Slurry Waste

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Chemical Mechanical Polishing of Polyarylether Low Dielectric Constant Layers by Manganese Oxide Slurry

Cited by 32 publications

References 5 publications

Effect of Transition Metal Compounds on Amorphous SiC Removal Rates

Effect of Transition Metal Compounds on Amorphous SiC Removal Rates

Enhancement in Surface Finish by Modification of Basic Colloidal Silica with Silane in Chemical Mechanical Polishing

Mn2O3 Slurry Achieving Reduction of Slurry Waste

Contact Info

Product

Resources

About

Mn₂O₃ Slurry Achieving Reduction of Slurry Waste