Chemical modification of n-GaAs electrodes with Os3+ gives a 15% efficient solar cell

Tufts, Bruce J.; Abrahams, I.; Santangelo, P. G.; Ryba, Gail N.; Casagrande, Louis G.; Lewis, Nathan S.

doi:10.1038/326861a0

Cited by 59 publications

(20 citation statements)

References 15 publications

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“…Indium layers, formed under H2 evolution at bare InP in a cathodic corrosion process, yield large C~H values easily detected with impedance, a decrease of the saturation photocurrent density, or In oxidation transients in the j/U curves. 8 [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17] In at the interface would obviously not be compatible with small CT rates. However, since In is formed under current flow for higher diffusion overpotenrials even at p-InP(Ag), corrosion also occurs in V 3 § + HC1 at a potential below the most negative U~edox used in the experiments (-500 mV/SCE).…”

Section: Electrochemical Charge-transfermentioning

confidence: 99%

“…A major problem has been that cells that are designed for optimal ESR performance (thin layer) generally exhibit the electrochemically undesirable features of large time constants, high resistance, and fragility. However, excellent quality electrochemical responses can be achieved in high resistance solvents with tubular cells described by Bagchi et al, [3][4][5][6] Mu and Kadish. 7 Compton et al, ~ and Dunsch and Petr 9 have recently described improved flat cell designs.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Charge Transfer at Photoelectrochemical Solar Cells: Conclusions from the Open‐Circuit Impedance of p ‐ InP in V 3 + / 2 +

Schefold¹

1995

J. Electrochem. Soc.

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Two resistance-capacitance (RC! time constants are detectable in the open-circuit impedance of illuminated (bare and Ag-treated) p-InP in contact with V 3/2+ + HC1 solution. The dependence of the time constants on illumination intensity and concentration of V 3+ and V 2 § is used to identify processes related to recombination and electrochemical charge transfer, respectively. Charge transfer (CT) rates at metal-treated electrodes [p-InP(Ag)] turn out to be somewhat smaller than at metallic Ag electrodes. For 0.3M V 3 §247 CT at p-InP(Ag) is sufficiently fast for solar cell operation under solar irradiation intensities (exchange current density io = 40 mA cm-e). CT at bare p-InP is much slower (io = 0.2 to 2 mAcm 2). Impedance data are fitted with two transformable equivalent circuits (differential models) which both yield similar values for recombination and CT elements. Thereby charging/discharging processes at the interface can be attributed either to a charging/ discharging of the differential Helmholtz capacity Cm~ or an interfacial defect capacity. Measured values for either element -~ -2 are equal or smaller than the CHH value of bulk metal electrodes [about 2 to 20 ~F cm " at pInP(Ag), < i ~F cm at bare p-InP].

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Section: Electrochemical Charge-transfermentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Charge Transfer at Photoelectrochemical Solar Cells: Conclusions from the Open‐Circuit Impedance of p ‐ InP in V 3 + / 2 +

Schefold¹

1995

J. Electrochem. Soc.

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“…This similarity with the p-n junction made possible the design of a number of PEC solar cells [12][13][14][15] that in the case of n-type semiconductors have achieved power conversion efficiencies as high as 15% [16]. Issues of semiconductor photocorrosion, as well as surface instability under prolonged operation have somehow discouraged their further development.…”

Section: Introductionmentioning

confidence: 99%

Prediction of photovoltaic p–n device short circuit current by photoelectrochemical analysis of p-type CIGSe films

Colombara

Crossay

Regesch

et al. 2014

Electrochemistry Communications

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The quality control of individual semiconductor thin films during fabrication of multiple layers is important for industry and academia. The ultimate aim of this research is to predict the efficiency of p-n junction solar cells by photoelectrochemical analysis of the bare p-type semiconductor. A linear correlation between the photocurrent measured electrochemically on Cu(In,Ga)Se 2 absorber layers through a Eu 3+ electrolyte junction and short circuit current and efficiency of the corresponding solid state devices is found. However, the correlation is complicated by pronounced recombination at the semiconductor/electrolyte interface, while the solid state interface behaves more ideally.

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“…Surface modification of semiconductors has been shown to be an interesting technique for the improvement of the surface properties, thereby enhancing the efficiency and stability of photoelectrochemical (PEC) solar cell. While the initial investigations were carried out on GaAs and [nP [1][2][3][4][5][6], the studies were later extended to the II-VI, CdSe and CdTe [7][8][9][10][11][12][13][14][15][16][17] which are of technological interest for thin film solar cell and other opto-electronic devices. An increase of Voc and a significant decrease in Jo of CdSe electrodes has been observed after dipping in a solution of ZnCI z [11][12][13][14][15][16][17] or in an aqueous solution of KzCrO4 [18,19].…”

Section: Introductionmentioning

confidence: 99%

Chemically deposited n-CdSe thin film photo-electrochemical cells: effects of Zn2+-modification

Mandal

Savadogo

1992

J Mater Sci

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The photoelectrochemical solar cell properties of chemically deposited n-CdSe films were studied before and after Zn 2+ surface modification. It was shown that the surface properties underwent conceivable changes after Zn 2+ treatment. The current-voltage characteristics in the dark showed a significant decrease in reverse saturation current density, Jo, from 5.4 x 10 -7 to 1.2 x 10 _9 Acm -2 and in ideality factor, n, from 2.46 to 1.27. Under AM1 illumination, other parameters have been found to be considerably enchanced, e.g. the open-circuit photovoltage, Voc, increased from 0.53 to 0.85 V with respect to SCE; the short-circuit photocurrent density, Jso, from 2.62 to 8.35 mAcm-2; fill factor from 0.38 to 0.62 and the minority carrier diffusion length, Lp, from 0.16 to 0.22 #m. X-ray photoelectron spectroscopic data on the Zn2+-modified CdSe showed the formation of metallic Zn islets and a thin layer of Se02 on the surface. All these important improvements of the CdSe PEC properties may be attributed to the redistribution of active interface states within the band gap due to strong interaction of the electrodepositive Zn 2+ ions. Support for these observations were obtained by sub-band gap response studies, contact potential difference measurements in N 2 ambient and the estimation of the surface recombination velocities before and after modification.

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Chemical modification of n-GaAs electrodes with Os3+ gives a 15% efficient solar cell

Cited by 59 publications

References 15 publications

Charge Transfer at Photoelectrochemical Solar Cells: Conclusions from the Open‐Circuit Impedance of p ‐ InP in V 3 + / 2 +

Charge Transfer at Photoelectrochemical Solar Cells: Conclusions from the Open‐Circuit Impedance of p ‐ InP in V 3 + / 2 +

Prediction of photovoltaic p–n device short circuit current by photoelectrochemical analysis of p-type CIGSe films

Chemically deposited n-CdSe thin film photo-electrochemical cells: effects of Zn2+-modification

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