Prediction of photovoltaic p–n device short circuit current by photoelectrochemical analysis of p-type CIGSe films

Colombara, Diego; Crossay, Alexandre; Regesch, David; Broussillou, C.; Monsabert, Thomas Goislard de; Grand, P.; Dale, Phillip J.

doi:10.1016/j.elecom.2014.08.026

Cited by 15 publications

(14 citation statements)

References 43 publications

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“…PEC transients of the CIS films were recorded by holding the absorbers at −0.4 V vs. Ag/AgCl reference in a 0.2 M aqueous Eu 3+ solution, employing a three-electrode setup described previously 66 . Illumination was supplied by a 530 nm light-emitting diode (Thorlabs), subject to an asymmetric square-wave duty cycle.…”

Section: Methodsmentioning

confidence: 99%

Chemical instability at chalcogenide surfaces impacts chalcopyrite devices well beyond the surface

et al. 2020

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The electrical and optoelectronic properties of materials are determined by the chemical potentials of their constituents. The relative density of point defects is thus controlled, allowing to craft microstructure, trap densities and doping levels. Here, we show that the chemical potentials of chalcogenide materials near the edge of their existence region are not only determined during growth but also at room temperature by post-processing. In particular, we study the generation of anion vacancies, which are critical defects in chalcogenide semiconductors and topological insulators. The example of CuInSe 2 photovoltaic semiconductor reveals that single phase material crosses the phase boundary and forms surface secondary phases upon oxidation, thereby creating anion vacancies. The arising metastable point defect population explains a common root cause of performance losses. This study shows how selective defect annihilation is attained with tailored chemical treatments that mitigate anion vacancy formation and improve the performance of CuInSe 2 solar cells.

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Section: Methodsmentioning

confidence: 99%

Chemical instability at chalcogenide surfaces impacts chalcopyrite devices well beyond the surface

et al. 2020

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“…In Figure A, we can see that the higher photoactivity is achieved for the TT 300 °C/3 h film, which also showed different electrochemical behavior. This higher photocurrent can be correlated not only to a better photoactivity toward hydrogen gas production, but also to higher solar cell efficiency if a photovoltaic device is constructed with this film, as demonstrated by Colombara et al . for Cu(In,Ga)Se 2 thin films.…”

Section: Resultsmentioning

confidence: 99%

Thermal Treatment Effects on Electrodeposited Sb₂Se₃ Photovoltaic Thin Films

2017

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Antimony selenide thin films were prepared through potentiostatic co‐electrodeposition by applying −0.6 V from a bath composed of 2.5 mM K(SbO)C4H4O6 ⋅ 0.5 H2O and 2.0 mM SeO2 in a supporting electrolyte of 0.5 M Na2SO4/H2SO4 at pH 2. The films were subjected to different thermal treatment (TT) conditions under a Se(vapor)/N2 atmosphere. Cyclic voltammetry was used to evaluate the electrochemical process of each element separately as well as the binary system on Pt and FTO working electrodes. The morphology, composition, band gap, crystallography, and photoactivity toward hydrogen gas production of the films were evaluated as a function of TT conditions, in order to obtain insight into their effects on film properties. Under all conditions, the films showed homogeneous and rough surfaces and a stoichiometric Sb2Se3 composition. The non‐thermal‐treated film was non‐crystalline, whereas after TT, all films showed a pure orthorhombic Sb2Se3 phase. It was observed that the crystallographic texturization of films in the (120) plane, caused by some TT conditions, is detrimental to the photoactivity. At the optimized TT conditions (300 °C for 3 h), the film presented good crystallographic and optoelectronic properties and photoactivity, with a photocurrent value of 168.15 μA cm−2 (at the standard hydrogen gas evolution potential) and a band gap of around 1.1 eV.

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“…The photocurrent was doubled by etching with potassium cyanide for 60 s, reaching an EQE(530 nm) of 5%. This is a very common phenomenon for chalcogenide semiconductor films, and is likely related to the removal of conductive Cu-Se phases from the surface acting as preferential paths for recombination of the charge carriers [31]. Subsequent etching steps with hydrochloric acid reduced the photocurrent, but modified the photocurrent transient substantially (i.e.…”

Section: Photoelectrochemical Characterizationmentioning

confidence: 99%

“…Photoelectrochemical characterization (PEC) of selenized samples were performed with a set-up described in [31] aqueous electrolyte as the electron scavenging species. The film was subject to several consecutive etching treatments with 5 wt% potassium cyanide (KCN, Sigma-Aldrich !…”

Section: Characterization Of the Filmsmentioning

confidence: 99%

Electrodeposition and selenization of brass/tin/germanium multilayers for Cu2Zn(Sn1-xGex)Se4 thin film photovoltaic devices

Clauwaert

Goossens

Wild

et al. 2016

Electrochimica Acta

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A B S T R A C TDense, closed, homogeneous brass/tin/germanium multilayers have been prepared by electrochemical methods. The stacks were electrodeposited on molybdenum-sputtered soda-lime glass. Brass was deposited first from an aqueous pyrophosphate electrolyte. Then, tin was deposited from a tin(II) pyrophosphate electrolyte. Germanium was deposited as the top film from 5 vol% GeCl 4 in propylene glycol. The composition of the brass/tin/germanium stack could easily be controlled by adjustment of the charge of the deposition of each coating and with special attention to exchange reactions. The variation in film thickness was minimized by using a rotating disk electrode (RDE) sample holder with a current thief. Soft-annealing under a nitrogen atmosphere and selenization with elemental selenium resulted in dense, closed copper-poor and zinc-rich CZTGSe absorber material. P-type conductivity was confirmed by photoelectrochemistry and a first photovoltaic device showed a power conversion efficiency of 0.6% and a band gap near 1.2 eV (with Ge/(Sn + Ge) = 0.38).

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Prediction of photovoltaic p–n device short circuit current by photoelectrochemical analysis of p-type CIGSe films

Cited by 15 publications

References 43 publications

Chemical instability at chalcogenide surfaces impacts chalcopyrite devices well beyond the surface

Chemical instability at chalcogenide surfaces impacts chalcopyrite devices well beyond the surface

Thermal Treatment Effects on Electrodeposited Sb₂Se₃ Photovoltaic Thin Films

Electrodeposition and selenization of brass/tin/germanium multilayers for Cu2Zn(Sn1-xGex)Se4 thin film photovoltaic devices

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Prediction of photovoltaic p–n device short circuit current by photoelectrochemical analysis of p-type CIGSe films

Cited by 15 publications

References 43 publications

Chemical instability at chalcogenide surfaces impacts chalcopyrite devices well beyond the surface

Chemical instability at chalcogenide surfaces impacts chalcopyrite devices well beyond the surface

Thermal Treatment Effects on Electrodeposited Sb2Se3 Photovoltaic Thin Films

Electrodeposition and selenization of brass/tin/germanium multilayers for Cu2Zn(Sn1-xGex)Se4 thin film photovoltaic devices

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Thermal Treatment Effects on Electrodeposited Sb₂Se₃ Photovoltaic Thin Films