2020
DOI: 10.1016/j.apsusc.2020.146302
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Chemical, morphological and optical properties of undoped and Cu-doped ZnO thin films submitted to UHV treatment

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Cited by 21 publications
(5 citation statements)
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“…OIII located at 533.2eV is related to impurity species as hydroxides and/or carbon oxides adsorbed on the surface in agreement with reported results[28].For IZO, the O1s is also asymmetric, involving three peaks. The two peaks OI and OII appear at (530.1 eV; 531.8 eV) for IZO (4%In) and (530.1eV; 531.7 eV) for IZO (6% In).…”
supporting
confidence: 90%
“…OIII located at 533.2eV is related to impurity species as hydroxides and/or carbon oxides adsorbed on the surface in agreement with reported results[28].For IZO, the O1s is also asymmetric, involving three peaks. The two peaks OI and OII appear at (530.1 eV; 531.8 eV) for IZO (4%In) and (530.1eV; 531.7 eV) for IZO (6% In).…”
supporting
confidence: 90%
“…For the original film, the core levels of Zn2p 3/2 and Zn2p 1/2 are identified at 1021 eV and 1044.1 eV, respectively, associated with zinc ions in ZnO. 32 In the annealed film, the Zn 2p peak shifts to a higher binding energy (∼1 eV), indicating the formation of metallic Zn, suggesting that the annealing process may lead to interstitial zinc formation. 33 Fig.…”
Section: Resultsmentioning
confidence: 98%
“…For the original film, the core levels of Zn2p 3/2 and Zn2p 1/2 are identified at 1021 eV and 1044.1 eV, respectively, associated with zinc ions in ZnO. 32 In the annealed film, the Zn 2p peak shifts to a higher binding energy (B1 eV), indicating the formation of metallic Zn, suggesting that the annealing process may lead to interstitial zinc formation. 33 spectra of both film types, with peaks at 529.8 eV and 531.2 eV representing lattice oxygen and oxygen vacancies, respectively, 34 indicating the presence of oxygen vacancies in both films.…”
Section: Structure and Characteristics Of The Zno/srtio 3 Heterojunctionmentioning
confidence: 98%
“…For this reason, ZnO became a popular material for short wavelength opto-electronic devises, transistors, photo diodes and Liquid Crystal (LC) based sensors and laser applications 3 . The ZnO structure can be doped with some elements such as Fe 4 , Cu 5 , 6 , Co 7 , Gd 8 , or Al 9 to improve its optical and electrical properties. In the past few years, many studies have been conducted to examine the effect of co-dopants such as (Cu-Mg) 10 , (Cd-Ni) 11 , (Al-In) 12 , (Fe-Al) 13 , (Al-Cu) 14 on the electro-optical properties of ZnO, and it was shown that the electro-optical properties of the ZnO nanomaterial are improved through co-doping.…”
Section: Introductionmentioning
confidence: 99%