2018
DOI: 10.1039/c7ta10306a
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Chemical reaction between an ITIC electron acceptor and an amine-containing interfacial layer in non-fullerene solar cells

Abstract: Non-fullerene acceptor ITIC can react with PEI (or PEIE), which destroys the original intramolecular charge transfer in ITIC.

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Cited by 131 publications
(138 citation statements)
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“…Figure b shows some typical chemical structures of n‐semiconductors, such as fullerene, diimide, and quinoid acceptors, that could be doped by anion n‐dopants, such as quaternary ammonium and phosphonium salts, and polyelectrolytes with Lewis base anions (anion X − = F − , Cl − , Br − , I − , OH − , AcO − , etc.) (Figure c) . The electron transfer between various Lewis base anions and n‐type semiconductors have been verified by electron spin resonance measurements ( Figure ), confirming the generation of radical anion signals from doped organic semiconductors .…”
Section: Solution‐processable Conductive Organics Via Anion‐induced Nsupporting
confidence: 79%
“…Figure b shows some typical chemical structures of n‐semiconductors, such as fullerene, diimide, and quinoid acceptors, that could be doped by anion n‐dopants, such as quaternary ammonium and phosphonium salts, and polyelectrolytes with Lewis base anions (anion X − = F − , Cl − , Br − , I − , OH − , AcO − , etc.) (Figure c) . The electron transfer between various Lewis base anions and n‐type semiconductors have been verified by electron spin resonance measurements ( Figure ), confirming the generation of radical anion signals from doped organic semiconductors .…”
Section: Solution‐processable Conductive Organics Via Anion‐induced Nsupporting
confidence: 79%
“…Polymer solar cells (PSCs) have attracted great attention for their advantages such as flexibility, light weight, and low‐cost production . In the past decades, extensive efforts have been devoted to the development of photovoltaic materials and device engineering, urging the power conversion efficiencies (PCEs) of the single‐junction PSCs recently up to 14% .…”
Section: Introductionmentioning
confidence: 99%
“…Figure S7, Supporting Information depicts J 0.5 versus V appl – V bi plotted for Mott–Gurney SCLC fitting of the electron‐only devices ITO/PBTz‐TMAI or PBTz‐SO 3 Na or CH 3 OH /Al. [ 30 ] Electron mobility was calculated by the Mott–Gurney SCLC formula [ 31,32 ] : J=(9/8)μeεoεr(V2/L3) where J is the current density, µ e is the electron mobility, ε o is the dielectric constant of free space (ε o = 8.85 × 10 −12 F m −1 ), ε r is the permittivity of active layer, V is the internal voltage of the device, and L is the thickness of active layer. The electron mobility for the device with CH 3 OH layer was only 2.2 × 10 −4 cm 2 V −1 s −1 , whereas those of PBTz‐TMAI and PBTz‐SO 3 Na interlayers were enhanced to 2.3 and 1.8 × 10 −3 cm 2 V −1 s −1 , respectively.…”
Section: Resultsmentioning
confidence: 99%