Chemical Solution Processing of Strontium Bismuth Tantalate Films

Abstract

---We describe Chemical Solution Deposition (CSD) processes by which Strontmm~= B Tantdate (SBT) thin films can be prepared at temperatures as low as 550°C. In this paper, we will present strategies used to optimize the properties of the films including solution chemistry, film composition, the nature of the substrate (or bottom electrode) used, and the thermal processing cycle. Under suitable conditions, -1700i& films can be prepared which have a large switchable polarization (2P, > 10p.C/cm2), and an operating voltage, defined as the voltage at which 0.80 x 2Prmax is switched, 2.OV. We also describe an all-alkoxide route to SBT films from which SBT can be crystallized at 550"C.

Tantalum Penta‐Glycolate Sol as a Precursor of Strontium Bismuth Tantalate Ferroelectric Thin Films

“…The values of remanent polarization (which correspond to the stored information in the memory) are P r ∼10 μC/cm 2 . The coercive field is E c ∼65 kV/cm, and the operating voltage is ∼2 V (the voltage at which 0.80 × 2 P r is switched) 31 . The film has low values of fatigue (which represent the loss of information of the memory with repeated reading and writing) of ∼10 10 cycles and a retention of 90% of the polarization (retention of information with time) at 10 5 s 22,32 .…”