Chemical state effect in the auger (C KVV and Si LVV) spectra of hexamethyldisilane

Souza, G. G. B. de; Platania, R.; Souza, A.C. De A. E; Maracci, F.

doi:10.1016/0301-0104(89)85018-9

Cited by 9 publications

(8 citation statements)

References 14 publications

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“…The summation of the computational Si[X]:L 23 VV and Si[Me]:L 23 VV Auger electron spectra (AES) in each molecule is given in Figures a and a. For comparison, Figures and also represent Si:L 23 VV AES of Si(CH 3 ) 4 , SiF 4 , and SiCl 4 vapors obtained previously. − The computational spectra of FSMSE and CSMSE given in Figures and are fairly consistent with the experimental spectra. The spectra of FSMSE vapor (Figure a–c) are similar to those obtained for condensed F 3 SiCD 2 CH 2 Si(CH 3 ) 3 …”

Section: Resultssupporting

confidence: 69%

“…Because the Si[Me]:L 23 VV AES of FSMSE and CSMSE (Figures b and b) are close to each other and similar to that of Si(CH 3 ) 4 vapor except the spectral resolution (Figures d and d), , we can assign the Si[Me]:L 23 VV Auger peaks seen in both FSMSE and CSMSE according to the data of Si(CH 3 ) 4 . The Si[Me]:L 23 VV Auger peaks in 67–83 eV (Figures b and b) are assigned to Auger final states with two valence holes delocalized over the four Si[Me]–C bonds.…”

Section: Resultsmentioning

confidence: 63%

“…6 In Figures 3 and 4, the Si[Me]:L 23 VV AES of FSMSE and CSMSE are close to each other, and similar to that of Si(CH 3 ) 4 vapor. 21,24 However, the Si[X]:L 23 VV AES of FSMSE and CSMSE are totally different from each other. Furthermore, those are similar to the Si:L 23 VV AES of SiF 4 and SiCl 4 vapors, 20,22,26,32 as mentioned in sections 4.2.2 and 4.2.3.…”

Section: Computational Methods and Proceduresmentioning

confidence: 99%

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Site-Specific Electron-Relaxation Caused by Si:2p Core-Level Photoionization: Comparison between F₃SiCH₂CH₂Si(CH₃)₃ and Cl₃SiCH₂CH₂Si(CH₃)₃ Vapors by Means of Photoelectron Auger Electron Coincidence Spectroscopy

Nagaoka

Kakiuchi

Ohshita³

et al. 2016

J. Phys. Chem. A

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Site-specific electron relaxations caused by Si:2p core-level photoionizations in FSiCHCHSi(CH) and ClSiCHCHSi(CH) vapors have been studied by means of the photoelectron Auger electron coincidence spectroscopy. FSiCHCHSi(CH) shows almost 100% site-specificity in fragmentation caused by the Si:2p ionization. However, substitution of Cl for F of FSiCHCHSi(CH) considerably reduces the site-specificity at the Si atom bonded to three halogen atoms, with the site-specificity at the Si site bonded to three methyl groups remaining largely unchanged. The site-specificity reduction in ClSiCHCHSi(CH) is considered to take place during the transient period between Si:LVV Auger electron emission and the subsequent fragmentation. The reason for the reduction can be explained in terms of some differences between these two molecules in the LVV Auger decay at the Si site bonded to the three halogen atoms.

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Section: Resultssupporting

confidence: 69%

Section: Resultsmentioning

confidence: 63%

Section: Computational Methods and Proceduresmentioning

confidence: 99%

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Site-Specific Electron-Relaxation Caused by Si:2p Core-Level Photoionization: Comparison between F₃SiCH₂CH₂Si(CH₃)₃ and Cl₃SiCH₂CH₂Si(CH₃)₃ Vapors by Means of Photoelectron Auger Electron Coincidence Spectroscopy

Nagaoka

Kakiuchi

Ohshita³

et al. 2016

J. Phys. Chem. A

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“…In contrast, Zlon/ltot-lon for Si(CH3)3+ decreases rapidly with increasing photon energy in the range 102-105 eV whereas that for CH3+ increases prominently around 106 eV, theenergy above which the total photoionization efficiency curve decreases. 95 The peaks at 102.8 and 104.6 eV are assigned to the excitation of an Si:Zp electron into unoccupied molecular orbitals below the threshold. Figure IC shows the total photoionization efficiency curve of TCS, which is consistent with the photoabsorption spectrum reported pr~viously.~~ The Si:2p threshold of TCS is located at 110.17 eV.90 In Figure IC, three peaks can be seen at 104.7, 105.8,and 110.1 eV.…”

Section: Time Of Flight U S )mentioning

confidence: 99%

Ionic fragmentation processes following silicon:2p core level photoexcitation and photoionization of 1,1,1-trimethyltrichlorodisilane

Nagaoka¹,

Ohshita²,

Ishikawa³

et al. 1993

J. Phys. Chem.

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Ionic fragmentation processes following Si:2p core-level photoexcitation and photoionization of 1,1,1trimethyltrichlorodisilane (Me3SiSiC13) have been studied in the range 100-1 10 eV by means of photoelectronphotoion and photoion-photoion coincidence techniques. The total photoionization efficiency curve of Me3SiSiCl3 has two peaks near the 2p core-ionization threshold of the silicon atom bonded to three methyl groups (Si[MeJ). These two peaks are assigned to the excitation of the Si[Me]:2p electron into unoccupied molecular orbitals below the threshold. Resonant Auger processes follow the excitation. The relative yields of H+, CHm+ (m = &2), and SiCH,t+ ions and CH,+-C2Hn++Si+, H+-CHm+, and H + S i C H d + ion pairs are enhanced around the Si[Me]:2p core-ionization threshold. The ionic fragmentation processes following the Si[Me]:2p excitation and ionization are discussed. The excitation and ionization efficiency from the 2p core-level of the silicon atom bonded to three chlorine atoms (Si [Cl]) is very small. The results on Me3SiSiCl3 are compared with those on tetramethylsilane, tetrachlorosilane, and hexamethyldisilane.

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“…Na solução do problema proposto (4), alguns resultados sobre a monotonicidade e estabilidade de controladores LQ (Linear Quadrático) com horizonte deslizante são utilizados (Bitmead et al (1990), de Souza et al (1986), de Souza (1989), Wimmer (1992)).…”

Section: Equações a Diferenças De Riccati (Rde)unclassified

Controle Preditivo Robusto com Horizonte Finito de sistemas lineares variantes no tempo

Batista

Araujo

2019

Anais Do 14º Simpósio Brasileiro De Automação Inteligente

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This work proposes a new approach for the Finite Horizon Robust Model Predictive Control (FH-RMPC) problem, for linear discrete systems with time-varying polytopic uncertainties. The basic idea of this approach is to find, in each sampling time, the optimal state feedback control law based on Riccati difference equations (RDE) that minimizes an objective function with finite horizon and comply with input and output constraints. The closed loop stability, known as one of the challenging themes of FH-RMPC strategy with constraints, is based on monotonic property of the RDE from Linear Quadratic (LQ) control problem with finite horizon. In this proposed method it is not necessary that the usual terminal weighting matrix be fixed to achieve asymptotic stability. Finally, the efficiency of the proposed approach is illustrated by numerical examples. Resumo: Este trabalho propõe uma nova abordagem para o problema de Controle Preditivo Robusto baseado em modelo de Horizonte Finito (FH-RMPC), de sistemas lineares em tempo discreto com incertezas politópicas variantes no tempo. A ideia básica desta abordagem é encontrar, em cada instante de amostragem, um controlador ótimo por realimentação de estado, basedo nas equações a diferenças de Riccati (RDE), que minimiza uma função custo de horizonte finito e atenda as restrições nos sinais de controle e saída. A garantia de estabilidade em malha fechada, conhecida como um dos temas mais desafiadores da estratégia FH-RMPC com restrições, é baseada na propriedade de monotonicidade das RDEs obtidas na solução do problema de Controle Linear Quadrático (LQ) de horizonte finito. Na abordagem proposta não é necessário que a usual matriz de custo terminal seja fixa para atingir a estabilidade assintótica. Finalmente, a eficiência do método proposto é ilustrada por exemplos numéricos.

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Chemical state effect in the auger (C KVV and Si LVV) spectra of hexamethyldisilane

Cited by 9 publications

References 14 publications

Site-Specific Electron-Relaxation Caused by Si:2p Core-Level Photoionization: Comparison between F₃SiCH₂CH₂Si(CH₃)₃ and Cl₃SiCH₂CH₂Si(CH₃)₃ Vapors by Means of Photoelectron Auger Electron Coincidence Spectroscopy

Site-Specific Electron-Relaxation Caused by Si:2p Core-Level Photoionization: Comparison between F₃SiCH₂CH₂Si(CH₃)₃ and Cl₃SiCH₂CH₂Si(CH₃)₃ Vapors by Means of Photoelectron Auger Electron Coincidence Spectroscopy

Ionic fragmentation processes following silicon:2p core level photoexcitation and photoionization of 1,1,1-trimethyltrichlorodisilane

Controle Preditivo Robusto com Horizonte Finito de sistemas lineares variantes no tempo

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Chemical state effect in the auger (C KVV and Si LVV) spectra of hexamethyldisilane

Cited by 9 publications

References 14 publications

Site-Specific Electron-Relaxation Caused by Si:2p Core-Level Photoionization: Comparison between F3SiCH2CH2Si(CH3)3 and Cl3SiCH2CH2Si(CH3)3 Vapors by Means of Photoelectron Auger Electron Coincidence Spectroscopy

Site-Specific Electron-Relaxation Caused by Si:2p Core-Level Photoionization: Comparison between F3SiCH2CH2Si(CH3)3 and Cl3SiCH2CH2Si(CH3)3 Vapors by Means of Photoelectron Auger Electron Coincidence Spectroscopy

Ionic fragmentation processes following silicon:2p core level photoexcitation and photoionization of 1,1,1-trimethyltrichlorodisilane

Controle Preditivo Robusto com Horizonte Finito de sistemas lineares variantes no tempo

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Site-Specific Electron-Relaxation Caused by Si:2p Core-Level Photoionization: Comparison between F₃SiCH₂CH₂Si(CH₃)₃ and Cl₃SiCH₂CH₂Si(CH₃)₃ Vapors by Means of Photoelectron Auger Electron Coincidence Spectroscopy

Site-Specific Electron-Relaxation Caused by Si:2p Core-Level Photoionization: Comparison between F₃SiCH₂CH₂Si(CH₃)₃ and Cl₃SiCH₂CH₂Si(CH₃)₃ Vapors by Means of Photoelectron Auger Electron Coincidence Spectroscopy