Chemical vapor deposition and electrical characterization of sub-10nm diameter InSb nanowires and field-effect transistors

Band‐Selective Infrared Photodetectors with Complete‐Composition‐Range InAsxP1‐x Alloy Nanowires

“…One‐dimensional semiconductor nanowires (NWs) have aroused great interest recently as potential building blocks for a variety of fundamental optical and electronic components, such as nanometer‐scale lasers, light‐emitting diodes, field‐effect transistors, and photodetectors (PDs) . Among them, nanowire PDs, which can convert optical signals to electrical signals in nano/micrometer‐scale devices, are key functional units for on‐chip information communication and processing .…”

Field effect transistor based on single crystalline InSb nanowire

“…This corresponds to an upper bound of nanowire resistance due to the 2-probe measurement, and is consistent with the previous report on InSb nanowire grown by CVD method. 15 Gate dependence of source-drain current at different bias voltages is shown in Fig. 3b.…”

“…6-9 Many groups have reported electrochemical growth of polycrystalline nanowires, 10-13 but only little work has been done on the synthesis and characterizations of single crystalline InSb nanomaterials, [14][15][16][17] and a comprehensive transport studies on single nanowire is still lacking. In this paper, we analyze and present how single crystalline InSb nanowires can be synthesized via pulse-laser chemical vapor deposition method.…”

“…15,27 Enhanced surface state scattering due to size confinement has dominant effect on the mobility.…”

Optoelectronic properties of semiconductor nanowires

“…Due to the unique one-dimensional structural characteristics and physical properties, semiconductor nanowires (NWs) have received considerable attention as outstanding potential building blocks for future devices and systems and have been proposed for a variety of functional electronic and optoelectronic components such as light-emitting diodes (Duan, Huang, Agarwal, & Lieber, 2003), field-effect transistors (Duan, Huang, Cui, Wang, & Lieber, 2001;Bakin et al, 2010), photodetectors (PDs) (Paul et al, 2010;Shen, Chen, Bando, Golberg, & Zhu, 2008), and so forth.…”