Chemical vapor deposition growth of ReS₂ nanowires for high-performance nanostructured photodetector

Abstract

Rhenium disulfide (ReS2) is a recently discovered next-generation transition metal dichalcogenides (TMDs) material that exhibits unique properties, which have resulted in its wide use in the fabrication of electronic and optoelectronic devices. Studies on ReS2 have mainly focused on the synthesis and applications of two-dimensional (2D) materials, while studies on one-dimensional (1D) ReS2 have yet to be reported. Herein, 1D single-crystal ReS2 nanowires have been synthesized successfully for the first time via chemical vapor deposition (CVD) and utilized as the active layer in a nanostructured photodetector. The crystal structure, phonon vibration modes, and chemical states of the single-crystal ReS2 nanowires have been investigated. Furthermore, the nanostructured photodetector using single-crystal ReS2 nanowires as the active layer and Ag nanowire networks as the transparent electrodes exhibited excellent performance, including a higher photoresponsivity (5.08 × 105), the highest external quantum efficiency (1.07 × 106), and the largest specific detectivity (6.1 × 1015) among ReS2 nanostructure-based photodetectors reported to date. Furthermore, the photodetector performance under vacuum conditions was investigated, which provides some information on the work mechanism of the ReS2 photodetector.

Tunable Room‐Temperature Synthesis of ReS2 Bicatalyst on 3D‐ and 2D‐Printed Electrodes for Photo‐ and Electrochemical Energy Applications

“…Besides the exfoliation from bulk crystals, [ 21–24 ] among all ReS 2 synthesis techniques such as hydrothermal, [ 18,25–27 ] atomic layer deposition, [ 28 ] and chemical vapor deposition (CVD), [ 29–36 ] evidently CVD has emerged as the most favorable method. These works mainly utilized Re, ReO 3 or NH 4 ReO 4 , and S powder as precursors for Re and S, respectively, with high growth temperature between 450 to 1000 °C to initiate the reaction of the precursors.…”

“…These works mainly utilized Re, ReO 3 or NH 4 ReO 4 , and S powder as precursors for Re and S, respectively, with high growth temperature between 450 to 1000 °C to initiate the reaction of the precursors. [ 30–32,35,36 ] Apart from these single‐step CVD, Zhang et al showcased a two‐step CVD by dip‐casting graphene in NH 4 ReO 4 followed by high temperature H 2 S treatment. [ 34 ] Inspired by these works, our quest for a ReS 2 precursor is desired for low temperature depositions which would be compatible with PLA low temperature stability.…”

Si and Ge based metallic core/shell nanowires for nano-electronic device applications

“…have synthesized experimentally Pd/Pt core/shell nanowires with a diameter of 2.0 ± 0.5 nm and shown their application as catalysts for oxygen reduction reactions 52 . Recently, ReS 2 -NW with 0.65 nm diameter has been synthesized experimentally by using a chemical vapor deposition process 53 . Furthermore, K. B. Dhungana et al .…”

Synthesis of ultrathin rhenium disulfide nanoribbons using nano test tubes

“…Colloidal nanoparticles with an average diameter of 5.5 nm have also been formed [10]. Nanowires with a diameter of 180 nm were synthesised by An et al using a chemical vapour deposition (CVD) technique [11]. ReS2 nanoribbons were synthesised by He et al also by a CVD process; the width of the nanoribbons were approximately 50 nm and the lengths ranged from 10 to 30 μm [12].…”