Chemical vapor deposition merges MoS<sub>2</sub> grains into high-quality and centimeter-scale films on Si/SiO<sub>2</sub>

Singh, Mukesh; Ghosh, Rapti; Chen, Yu-Siang; Yen, Zhi‐Long; Hofmann, Mario; Chen, Yang‐Fang; Hsieh, Ya‐Ping

doi:10.1039/d1ra06933k

Cited by 4 publications

(3 citation statements)

References 55 publications

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“…The SEDP process permits the self‐alignment of contacts by utilizing the mandrel as the source electrode, the spacer as a dielectric, and a subsequently deposited metal layer as the drain electrode (inset Figure 4e) (more details on the fabrication can be found in the Supporting Information; Figure S2, Supporting Information). The thus‐produced edge‐contacted nanosheet transistor demonstrates semiconducting behavior with a field‐effect mobility of 0.52cm 2 V −1 s −1 , which is comparable to the pristine channel material [ 43 ] and emphasizes the suitability of our approach to create ultra‐scaled devices without introducing additional process‐related defects and impurities. Moreover, the unexpected transconductance characteristic compared to conventional SiO 2 ‐supported FET devices agrees with previous findings about the beneficial effect of the Al 2 O 3 spacer on avoiding Fermi‐level pinning and recovering the intrinsic ambipolar nature of MoS 2 .…”

Section: Resultsmentioning

confidence: 99%

Self‐Expansion Based Multi‐Patterning for 2D Materials Fabrication beyond the Lithographical Limit

Borhade,

Chen,

Chen

et al. 2023

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Two‐dimensional (2D) materials are promising successors for silicon transistor channels in ultimately scaled devices, necessitating significant research efforts to study their behavior at nanoscopic length scales. Unfortunately, current research has limited itself to direct patterning approaches, which limit the achievable resolution to the diffraction limit and introduce unwanted defects into the 2D material. The potential of multi‐patterning to fabricate 2D materials features with unprecedented precision and low complexity at large scale is demonstrated here. By combining lithographic patterning of a mandrel and bottom‐up self‐expansion, this approach enables pattern resolution one order of magnitude below the lithographical resolution. In‐depth characterization of the self‐expansion double patterning (SEDP) process reveals the ability to manipulate the critical dimension with nanometer precision through a self‐limiting and temperature‐controlled oxidation process. These results indicate that the SEDP process can regain the quality and morphology of the 2D material, as shown by high‐resolution microscopy and optical spectroscopy. This approach is shown to open up new avenues for research into high‐performance, ultra‐scaled 2D materials devices for future electronics.

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Section: Resultsmentioning

confidence: 99%

Self‐Expansion Based Multi‐Patterning for 2D Materials Fabrication beyond the Lithographical Limit

Borhade,

Chen,

Chen

et al. 2023

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“…For MoS 2 , the minimum σ is 8.28 S m −1 at 403 K and achieved a maximum σ of 1692 S m −1 at 691 K. For pure rGO, the S 2 σ is very low compared to the hybrid MoS 2 /rGO and shown in supplementary where k B is Boltzman constant (eV/K), s 0 constant and T is temperature (K). E a is 0.51 eV in the region of (25)(26)(27)(28)(29)(30)(31)(32)(33)(34)(35)(36)(37)(38) eV K −1 and E a is low in the region of (23-20) eV K −1 of 0.44 eV for MoS 2 . For MoS 2 /rGO, E a is −0.34 eV at eV region, a positive value of E a represents more energy required to move the carriers, thus decreased σ.…”

Section: Conductivity ( ( ))mentioning

confidence: 98%

Realization of low potential barrier in MoS₂/rGO heterojunction with enhanced electrical conductivity for thin film thermoelectric applications

Rengarajan,

et al. 2024

Nanotechnology

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Two-dimensional (2D) van der Waals (vdWs) materials in-plane anisotropy, caused by a low-symmetric lattice structure, has considerably increased their applications, particularly in thermoelectric. MoS2 and MoS2/reduced graphene oxide (rGO)/MoS2 thin films were grown on SiO2/Si substrate by atmospheric chemical vapor deposition technique to study the thermoelectric performance. Few layered MoS2 was confirmed by the vibrational analysis and the composition elements are confirmed by the XPS technique. The continuous grains lead to reduced phonon life time in A1g and low activation energy assists to enhance the electrical property. MoS2/rGO achieved the highest σ of 22622 S/m at 315 K due to an electron-rich cloud around the electrons in S atoms near the adjacent layer of rGO.

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“…Chemical vapor deposition (CVD), as a bottom-up synthesis method, uses precursors that are heated to high temperatures and then driven by a gas stream to react with the active substrate [44,45]. Especially for synthesizing porous carbon materials with desirable mechanical properties and electrical conductivity, CVD technology can create electrodes with unique properties of three-dimensional structure [46][47][48].…”

Section: Preparation Of Three-dimensional Electrodementioning

confidence: 99%

Three-Dimensional Electrochemical Sensors for Food Safety Applications

et al. 2023

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Considering the increasing concern for food safety, electrochemical methods for detecting specific ingredients in the food are currently the most efficient method due to their low cost, fast response signal, high sensitivity, and ease of use. The detection efficiency of electrochemical sensors is determined by the electrode materials’ electrochemical characteristics. Among them, three-dimensional (3D) electrodes have unique advantages in electronic transfer, adsorption capacity and exposure of active sites for energy storage, novel materials, and electrochemical sensing. Therefore, this review begins by outlining the benefits and drawbacks of 3D electrodes compared to other materials before going into more detail about how 3D materials are synthesized. Next, different types of 3D electrodes are outlined together with common modification techniques for enhancing electrochemical performance. After this, a demonstration of 3D electrochemical sensors for food safety applications, such as detecting components, additives, emerging pollutants, and bacteria in food, was given. Finally, improvement measures and development directions of electrodes with 3D electrochemical sensors are discussed. We think that this review will help with the creation of new 3D electrodes and offer fresh perspectives on how to achieve extremely sensitive electrochemical detection in the area of food safety.

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Chemical vapor deposition merges MoS₂ grains into high-quality and centimeter-scale films on Si/SiO₂

Abstract: Control of the precursor transport through oxygen dosing yields increased MoS2 coverage and increased connectivity between crystalline MoS2 domains.

Cited by 4 publications

References 55 publications

Self‐Expansion Based Multi‐Patterning for 2D Materials Fabrication beyond the Lithographical Limit

Self‐Expansion Based Multi‐Patterning for 2D Materials Fabrication beyond the Lithographical Limit

Realization of low potential barrier in MoS₂/rGO heterojunction with enhanced electrical conductivity for thin film thermoelectric applications

Three-Dimensional Electrochemical Sensors for Food Safety Applications

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Chemical vapor deposition merges MoS2 grains into high-quality and centimeter-scale films on Si/SiO2

Abstract: Control of the precursor transport through oxygen dosing yields increased MoS2 coverage and increased connectivity between crystalline MoS2 domains.

Cited by 4 publications

References 55 publications

Self‐Expansion Based Multi‐Patterning for 2D Materials Fabrication beyond the Lithographical Limit

Self‐Expansion Based Multi‐Patterning for 2D Materials Fabrication beyond the Lithographical Limit

Realization of low potential barrier in MoS2/rGO heterojunction with enhanced electrical conductivity for thin film thermoelectric applications

Three-Dimensional Electrochemical Sensors for Food Safety Applications

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Product

Resources

About

Chemical vapor deposition merges MoS₂ grains into high-quality and centimeter-scale films on Si/SiO₂

Realization of low potential barrier in MoS₂/rGO heterojunction with enhanced electrical conductivity for thin film thermoelectric applications