Chemical vapor deposition of boron carbide

A., Sezer,; Brand, Jennifer

doi:10.1016/s0921-5107(00)00538-9

Cited by 172 publications

(125 citation statements)

References 53 publications

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“…The mass density of B 4 C films was measured by RBS in combination with profilometry and revealed values between 2.0 and 2.5 g/cm Ϫ3 , which is in agreement with Ref. 8 and corresponds to the plasmon energy of 25-26 eV determined by electronenergy loss spectroscopy. Infrared spectra of the deposited B X C films display a very broad absorption band related to B-C bonds around 900-1300 cm Ϫ1 .…”

supporting

confidence: 86%

“…6 However, ta-C and c-BN are insulating materials with specific resistivities in the order of 10 10 ⍀ cm, 6 but B 4 C shows lower values between 10 3 and 10 9 ⍀ cm depending on the microstructure, stoichiometry, and deposition technique used. 7,8 At this writing, B 4 C films have mainly been grown by various chemical vapor deposition ͑CVD͒ techniques 8,9 and magnetron sputtering 10 with many different objectives including as a coating for nuclear fusion reactors. The deposited films are amorphous, but these high rate deposition techniques are not suitable for the controlled growth of uniform and pinhole-free thin ͑Ͻ20 nm͒ films.…”

mentioning

confidence: 99%

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Superhard, conductive coatings for atomic force microscopy cantilevers

Ronning

Wondratschek

Büttner

et al. 2001

Applied Physics Letters

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Boron carbide thin films were grown by mass selected ion beam deposition using low energy 11 B ϩ and 12 C ϩ ions at room temperature. The amorphous films exhibit any desired stoichiometry controlled by the ion charge ratio B ϩ /C ϩ . Films with a stoichiometry of B 4 C showed the optimal combination of a high mechanical strength and a low electrical resistivity for the coating of atomic force microscopy ͑AFM͒ silicon cantilevers. The properties of such AFM tips were evaluated and simultaneous topography and Kelvin mode AFM measurements with high lateral resolution were performed on the systems ͑i͒ Au nanoparticles on a p-WS 2 surface and ͑ii͒ conducting/ superconducting YBa 2 Cu 3 O 7Ϫx . © 2001 American Institute of Physics. ͓DOI: 10.1063/1.1415354͔ Atomic force microscopy ͑AFM͒ is one of the most powerful tools for surface characterization and has become indispensable for surface and materials science. Sophisticated AFM techniques have been rapidly developed in recent years and the progress is mainly due to the improvements made on the properties of the AFM tips. 1 For example, electrically conductive layers covering the AFM cantilevers provide the feasibility of synchronous measurement of the topography and the electrical properties of the specimen. 2 Tips coated with metals are perfect for noncontact Kelvin-mode measurements 3 and the obtained contact potential difference ͑CPD͒ pictures display a high lateral resolution. 4 However, the mechanical stability of such thin evaporated or sputtered coatings is very low, which results in a short lifetime in the order of a few pictures. 5 Therefore, hard-and low-resistivity coatings are highly desired and further requirements to the coating for the ideal AFM tip are: good adhesion, pinhole free with uniform thickness, atomic flat, and the coating should not be thicker than 20-30 nm in order to avoid an increased curvature radius of the tip.Layers of tetrahedrally bonded amorphous carbon ͑ta-C͒, cubic boron nitride (c-BN), and boron carbide (B 4 C) come into consideration as ideal coatings among the superhard materials. In contrast to chemical vapor deposited diamond, these materials can be grown at low temperature and exhibit an almost atomic flat surface, if they are deposited by physical vapor deposition techniques. 6 However, ta-C and c-BN are insulating materials with specific resistivities in the order of 10 10 ⍀ cm, 6 but B 4 C shows lower values between 10 3 and 10 9 ⍀ cm depending on the microstructure, stoichiometry, and deposition technique used. 7,8 At this writing, B 4 C films have mainly been grown by various chemical vapor deposition ͑CVD͒ techniques 8,9 and magnetron sputtering 10 with many different objectives including as a coating for nuclear fusion reactors. The deposited films are amorphous, but these high rate deposition techniques are not suitable for the controlled growth of uniform and pinhole-free thin ͑Ͻ20 nm͒ films. Further disadvantages of CVD are high growth temperatures and the necessary use of very toxic boron compounds or gases.In thi...

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supporting

confidence: 86%

mentioning

confidence: 99%

Superhard, conductive coatings for atomic force microscopy cantilevers

Ronning

Wondratschek

Büttner

et al. 2001

Applied Physics Letters

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“…A number of previous review articles have been presented on different forms of CVD: thermal CVD [2][3][4][5][6][7][8][9][10][11], plasma enhanced PE-CVD [12][13][14][15][16][17][18][19], hot-wire or hot filament (HWCVD or HFCVD) [20][21][22][23][24][25][26][27][28] and not many of them have been as exhaustive in their respective areas. Pyrolysis, although classified under CVD in some text, has become a wide area of research and technology covering synthesis of new products, qualitative and quantitative spectroscopic analysis of fluids and, lately, alternative route to production of debri-free x-ray sources; these aspects are elaborated further in the sections that follow.…”

Section: Fig 1 Generalised Schematic Of Chemical Vapor Deposition Symentioning

confidence: 99%

Progress in Ultrasonic Spray Pyrolysis for Condensed Matter Sciences Developed From Ultrasonic Nebulization Theories Since Michael Faraday

Mwakikunga

2013

Critical Reviews in Solid State and Materials Sciences

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“…% C concentration. [14]. Boron carbide is chemically inert and stable at high temperatures, moreover known as an excellent hard material after diamond and cubic boron nitride (c-BN).…”

Section: Boron Carbidesmentioning

confidence: 99%

Chemical vapour deposition of boron-carbon thin films from organoboron precursors

Yimamu¹,

Maiwulidan²

2016

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Boron-carbon (BxC) thin films enriched in 10B are potential neutron converting layers for 10Bbased solid-state neutron detectors given the good neutron absorption cross-section of 10B atoms in the thin film. Chemical Vapour Deposition (CVD) of such films faces the challenge that the maximum temperature tolerated by the aluminium substrate is 660 °C and low temperature CVD routes for BxC films are thus needed. This thesis presents the use of two different organoboron precursors, triethylboron –B(C2H5)3 (TEB) and trimethylboron – B(CH3)3 (TMB) as single-source precursors for CVD of BxC thin films. The CVD behaviour of TEB in thermal CVD has been studied by both BxC thin film deposition and quantum chemical calculations of the gas phase chemistry at the corresponding CVD conditions. The calculations predict that the gas phase reactions are dominated by β-hydride eliminations of C2H4 to yield BH3. In addition, a complementary bimolecular reaction path based on H2-assisted C2H6 elimination to BH3 is also present at lower temperatures in the presence of hydrogen molecules. A temperature window of 600 – 1000 °C for deposition of X-ray amorphous BxC films with 2.5 ≤ x ≤ 4.5 is identified showing good film density (2.40 – 2.65 g/cm3) which is close to the bulk density of crystalline B4C, 2.52 g/cm3 and high hardness (29 – 39 GPa). The impurity level of H is lowered to < 1 at. % within the temperature window. Plasma chemical vapour deposition has been studied using TMB as single-source precursor in Ar plasma for investigating BxC thin film deposition at lower temperature than allowed by thermal CVD and further understanding of thin film deposition process. The effect of plasma power, total pressure, TMB and Ar gas flow on film composition and morphology are investigated. The highest B/C ratio of 1.9 is obtained at highest plasma power of 2400 W and TMB flow of 7 sccm. The H content in the films seems constant at 15±5 at. %. The B-C bond is dominant in the films with small amount of C-C and B-O bonds, which are likely due to the formation of amorphous carbon and surface oxidation, respectively. The film density is determined as 2.16±0.01 g/cm3 and the internal compressive stresses are measured to be <400 MPa

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Chemical vapor deposition of boron carbide

Cited by 172 publications

References 53 publications

Superhard, conductive coatings for atomic force microscopy cantilevers

Superhard, conductive coatings for atomic force microscopy cantilevers

Progress in Ultrasonic Spray Pyrolysis for Condensed Matter Sciences Developed From Ultrasonic Nebulization Theories Since Michael Faraday

Chemical vapour deposition of boron-carbon thin films from organoboron precursors

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