Chemical Vapor Deposition of Copper Oxide Thin Films

Abstract

Copper oxide films were prepared by organometallic chemical vapor deposition of copper acetylacetonate in an oxygen-rich environment. The films were characterized by X-ray diffraction, Auger electron spectroscopy, X-ray photoelectron spectroscopy, and scanning electron microscopy. At 360 °C, Cu2O films were formed for an oxygen pressure of 150 torr and a copper acetylacetonate vapor pressure of 0.2 torr). The Cu2O film was polycrystalline, but the orientation was primarily [111]. Differential scanning calorimetry indicated that O2 assists decomposition of the organometallic precursor during pyrolysis.

Metal-Organic Chemical Vapor Deposition of Copper-Containing Phases: Kinetics and Reaction Mechanisms

“…Differential scanning calorimetry experiments on Cu-(acac)2 (Chang et al 35) indicated two different steps for the metal-ligand dissociation and the reaction between O2 and the ligand.…”